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Title: An Intrinsically Stretchable High-Performance Polymer Semiconductor with Low Crystallinity

Abstract

For wearable and implantable electronics applications, developing intrinsically stretchable polymer semiconductor is advantageous, especially in the manufacturing of large-area and high-density devices. A prime challenge is to simultaneously achieve good electrical and mechanical properties for these semiconductor devices. Although crystalline domains are generally needed to achieve high mobility, amorphous domains are necessary to impart stretchability. Recent progresses in the design of high-performance donor–acceptor polymers that exhibit low degrees of energetic disorder, while having a high fraction of amorphous domains, appear promising for polymer semiconductors. Here, a low crystalline, i.e., near-amorphous, indacenodithiophene-co-benzothiadiazole (IDTBT) polymer and a semicrystalline thieno[3,2-b]thiophene-diketopyrrolopyrrole (DPPTT) are compared, for mechanical properties and electrical performance under strain. It is observed that IDTBT is able to achieve both a high modulus and high fracture strain, and to preserve electrical functionality under high strain. Next, fully stretchable transistors are fabricated using the IDTBT polymer and observed mobility ≈0.6 cm 2 V -1 s -1 at 100% strain along stretching direction. In addition, the morphological evolution of the stretched IDTBT films is investigated by polarized UV-vis and grazing-incidence X-ray diffraction to elucidate the molecular origins of high ductility. In summary, the near-amorphous IDTBT polymer signifies a promising direction regarding molecular design principlesmore » toward intrinsically stretchable high-performance polymer semiconductor.« less

Authors:
ORCiD logo [1];  [1];  [1];  [1];  [1];  [1];  [2];  [1];  [3];  [1];  [1];  [1];  [3];  [1];  [2]; ORCiD logo [1]
  1. Stanford Univ., CA (United States)
  2. Univ. of Southern Mississippi, Hattiesburg, MI (United States)
  3. King Abdullah Univ. of Science and Technology (KAUST), Thuwal (Saudi Arabia)
Publication Date:
Research Org.:
Univ. of Southern Mississippi, Hattiesburg, MI (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES); US Air Force Office of Scientific Research (AFOSR); European Commission (EC); National Science Foundation (NSF)
OSTI Identifier:
1599386
Alternate Identifier(s):
OSTI ID: 1561371
Grant/Contract Number:  
SC0019361; FA9550‐18‐1‐0143; ECCS‐1542152
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
Advanced Functional Materials
Additional Journal Information:
Journal Volume: 29; Journal Issue: 46; Journal ID: ISSN 1616-301X
Publisher:
Wiley
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; low crystallinity; polymer semiconductors; stretchable electronics

Citation Formats

Zheng, Yu, Wang, Ging‐Ji Nathan, Kang, Jiheong, Nikolka, Mark, Wu, Hung‐Chin, Tran, Helen, Zhang, Song, Yan, Hongping, Chen, Hu, Yuen, Pak Yan, Mun, Jaewan, Dauskardt, Reinhold H., McCulloch, Iain, Tok, Jeffrey B. ‐H., Gu, Xiaodan, and Bao, Zhenan. An Intrinsically Stretchable High-Performance Polymer Semiconductor with Low Crystallinity. United States: N. p., 2019. Web. doi:10.1002/adfm.201905340.
Zheng, Yu, Wang, Ging‐Ji Nathan, Kang, Jiheong, Nikolka, Mark, Wu, Hung‐Chin, Tran, Helen, Zhang, Song, Yan, Hongping, Chen, Hu, Yuen, Pak Yan, Mun, Jaewan, Dauskardt, Reinhold H., McCulloch, Iain, Tok, Jeffrey B. ‐H., Gu, Xiaodan, & Bao, Zhenan. An Intrinsically Stretchable High-Performance Polymer Semiconductor with Low Crystallinity. United States. https://doi.org/10.1002/adfm.201905340
Zheng, Yu, Wang, Ging‐Ji Nathan, Kang, Jiheong, Nikolka, Mark, Wu, Hung‐Chin, Tran, Helen, Zhang, Song, Yan, Hongping, Chen, Hu, Yuen, Pak Yan, Mun, Jaewan, Dauskardt, Reinhold H., McCulloch, Iain, Tok, Jeffrey B. ‐H., Gu, Xiaodan, and Bao, Zhenan. Thu . "An Intrinsically Stretchable High-Performance Polymer Semiconductor with Low Crystallinity". United States. https://doi.org/10.1002/adfm.201905340. https://www.osti.gov/servlets/purl/1599386.
@article{osti_1599386,
title = {An Intrinsically Stretchable High-Performance Polymer Semiconductor with Low Crystallinity},
author = {Zheng, Yu and Wang, Ging‐Ji Nathan and Kang, Jiheong and Nikolka, Mark and Wu, Hung‐Chin and Tran, Helen and Zhang, Song and Yan, Hongping and Chen, Hu and Yuen, Pak Yan and Mun, Jaewan and Dauskardt, Reinhold H. and McCulloch, Iain and Tok, Jeffrey B. ‐H. and Gu, Xiaodan and Bao, Zhenan},
abstractNote = {For wearable and implantable electronics applications, developing intrinsically stretchable polymer semiconductor is advantageous, especially in the manufacturing of large-area and high-density devices. A prime challenge is to simultaneously achieve good electrical and mechanical properties for these semiconductor devices. Although crystalline domains are generally needed to achieve high mobility, amorphous domains are necessary to impart stretchability. Recent progresses in the design of high-performance donor–acceptor polymers that exhibit low degrees of energetic disorder, while having a high fraction of amorphous domains, appear promising for polymer semiconductors. Here, a low crystalline, i.e., near-amorphous, indacenodithiophene-co-benzothiadiazole (IDTBT) polymer and a semicrystalline thieno[3,2-b]thiophene-diketopyrrolopyrrole (DPPTT) are compared, for mechanical properties and electrical performance under strain. It is observed that IDTBT is able to achieve both a high modulus and high fracture strain, and to preserve electrical functionality under high strain. Next, fully stretchable transistors are fabricated using the IDTBT polymer and observed mobility ≈0.6 cm2 V-1 s-1 at 100% strain along stretching direction. In addition, the morphological evolution of the stretched IDTBT films is investigated by polarized UV-vis and grazing-incidence X-ray diffraction to elucidate the molecular origins of high ductility. In summary, the near-amorphous IDTBT polymer signifies a promising direction regarding molecular design principles toward intrinsically stretchable high-performance polymer semiconductor.},
doi = {10.1002/adfm.201905340},
url = {https://www.osti.gov/biblio/1599386}, journal = {Advanced Functional Materials},
issn = {1616-301X},
number = 46,
volume = 29,
place = {United States},
year = {2019},
month = {9}
}

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Cited by: 11 works
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