Facet-selective nucleation and conformal epitaxy of Ge shells on Si nanowires

Nguyen, Binh -Minh; Swartzentruber, Brian; Ro, Yun Goo; Dayeh, Shadi A.

doi:10.1021/acs.nanolett.5b02313

Title: Facet-selective nucleation and conformal epitaxy of Ge shells on Si nanowires

Journal Article · Thu Oct 08 00:00:00 EDT 2015 · Nano Letters

DOI:https://doi.org/10.1021/acs.nanolett.5b02313· OSTI ID:1234259

Nguyen, Binh -Minh ^[1]; Swartzentruber, Brian ^[2]; Ro, Yun Goo ^[3]; Dayeh, Shadi A. ^[1]

Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Univ. of California San Diego, La Jolla, CA (United States)
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Univ. of California San Diego, La Jolla, CA (United States)

Knowledge of nanoscale heteroepitaxy is continually evolving as advances in material synthesis reveal new mechanisms that have not been theoretically predicted and are different than what is known about planar structures. In addition to a wide range of potential applications, core/shell nanowire structures offer a useful template to investigate heteroepitaxy at the atomistic scale. We show that the growth of a Ge shell on a Si core can be tuned from the theoretically predicted island growth mode to a conformal, crystalline, and smooth shell by careful adjustment of growth parameters in a narrow growth window that has not been explored before. In the latter growth mode, Ge adatoms preferentially nucleate islands on the {113} facets of the Si core, which outgrow over the {220} facets. Islands on the low-energy {111} facets appear to have a nucleation delay compared to the {113} islands; however, they eventually coalesce to form a crystalline conformal shell. As a result, synthesis of epitaxial and conformal Si/Ge/Si core/multishell structures enables us to fabricate unique cylindrical ring nanowire field-effect transistors, which we demonstrate to have steeper on/off characteristics than conventional core/shell nanowire transistors.

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Research Organization:: Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: ECCS1351980; AC52-06NA25396; AC04-94AL85000

OSTI ID:: 1234259

Alternate ID(s):: OSTI ID: 1236215

Report Number(s):: LA-UR-15-24330; SAND-2015-8835J

Journal Information:: Nano Letters, Vol. 15, Issue 11; ISSN 1530-6984

Publisher:: American Chemical SocietyCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 15 works

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Si‐core/SiGe‐shell channel nanowire FET for sub‐10‐nm logic technology in the THz regime Yu, Eunseon; Son, Baegmo; Kam, Byungmin ETRI Journal, Vol. 41, Issue 6 https://doi.org/10.4218/etrij.2018-0281	journal	July 2019

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