Formation of tubular conduction channel in a SiGe(P)/Si core/shell nanowire heterostructure

Wang, Xuejing; Lin, Yung-Chen; Tai, Chia-Tse; Lee, Seok Woo; Lu, Tzu-Ming; Shin, Sun Ra; Addamane, Sadhvikas J.; Sheehan, Chris; Li, Jiun-Yun; Kim, Yerim; Yoo, Jinkyoung

doi:10.1063/5.0119654

Title: Formation of tubular conduction channel in a SiGe(P)/Si core/shell nanowire heterostructure

Journal Article · Tue Nov 08 00:00:00 EST 2022 · APL Materials

DOI:https://doi.org/10.1063/5.0119654· OSTI ID:1898359

^[1]; Lin, Yung-Chen ^[1]; Tai, Chia-Tse ^[2]; Lee, Seok Woo ^[3];

^[4]; Shin, Sun Ra ^[1];

^[4]; Sheehan, Chris ^[1];

^[5];

^[1];

^[1]

Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
National Taiwan Univ., Taipei (Taiwan)
Nanyang Technological Univ. (Singapore)
Sandia National Lab. (SNL-CA), Livermore, CA (United States)
National Taiwan Univ., Taipei (Taiwan); Taiwan Semiconductor Research Institute (Taiwan)

Realizing a tubular conduction channel within a one-dimensional core–shell nanowire (NW) enables better understanding of quantum phenomena and exploration of electronic device applications. Herein, we report the growth of a SiGe(P)/Si core/shell NW heterostructure using a chemical vapor deposition coupled with vapor–liquid–solid growth mechanism. The entire NW heterostructure behaves as a p-type semiconductor, which demonstrates that the high-density carriers are confined within the 4 nm-thick Si shell and form a tubular conduction channel. These findings are confirmed by both calculations and the gate-dependent current–voltage ( I _d – V _g ) characteristics. Atomic resolution microscopic analyses suggest a coherent epitaxial core/shell interface where strain is released by forming dislocations along the axial direction of the NW heterostructure. Additional surface passivation achieved via growing a SiGe(P)/Si/SiGe core/multishell NW heterostructure suggests potential strategies to enhance the tubular carrier density, which could be further modified by improving multishell crystallinity and structural design.

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Research Organization:: Los Alamos National Laboratory (LANL), Los Alamos, NM (United States)

Sponsoring Organization:: USDOE Laboratory Directed Research and Development (LDRD) Program; USDOE National Nuclear Security Administration (NNSA); Ministry of Science and Technology; National Taiwan University

Grant/Contract Number:: 89233218CNA000001; 20200672DI; NA0003525; 110-2622-8-002-014

OSTI ID:: 1898359

Alternate ID(s):: OSTI ID: 1897335

Report Number(s):: LA-UR-22-21355; TRN: US2311066

Journal Information:: APL Materials, Vol. 10, Issue 11; ISSN 2166-532X

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

References (43)

Enhanced Electron Mobility in Nonplanar Tensile Strained Si Epitaxially Grown on Si_xGe_1–xNanowires Wen, Feng; Tutuc, Emanuel Nano Letters, Vol. 18, Issue 1 https://doi.org/10.1021/acs.nanolett.7b03450	journal	December 2017
Composition-Tuned ZnO−CdSSe Core−Shell Nanowire Arrays Myung, Yoon; Jang, Dong Myung; Sung, Tae Kwang ACS Nano, Vol. 4, Issue 7 https://doi.org/10.1021/nn100684q	journal	June 2010
Germanium Nanowires and Core−Shell Nanostructures by Chemical Vapor Deposition of [Ge(C₅H₅)₂] Mathur, Sanjay; Shen, Hao; Sivakov, Vladimir Chemistry of Materials, Vol. 16, Issue 12 https://doi.org/10.1021/cm031175l	journal	May 2004
Epitaxial core–shell and core–multishell nanowire heterostructures Lauhon, Lincoln J.; Gudiksen, Mark S.; Wang, Deli Nature, Vol. 420, Issue 6911, p. 57-61 https://doi.org/10.1038/nature01141	journal	November 2002
Hole gas accumulation in Si/Ge core–shell and Si/Ge/Si core–double shell nanowires Zhang, Xiaolong; Jevasuwan, Wipakorn; Pradel, Ken C. Nanoscale, Vol. 10, Issue 45 https://doi.org/10.1039/c8nr05590d	journal	January 2018
How Can Si/Ge Core/Shell Nanowires Outperform Their Pure Material Counterparts? Lv, Yawei; Wang, Jiawei; Yang, Guanhua IEEE Transactions on Electron Devices, Vol. 67, Issue 3 https://doi.org/10.1109/ted.2020.2966583	journal	March 2020
Advanced core/multishell germanium/silicon nanowire heterostructures: The Au-diffusion bottleneck Dayeh, Shadi A.; Mack, Nathan H.; Huang, Jian Yu Applied Physics Letters, Vol. 99, Issue 2 https://doi.org/10.1063/1.3567932	journal	July 2011
Direct Measurement of Coherency Limits for Strain Relaxation in Heteroepitaxial Core/Shell Nanowires Dayeh, Shadi A.; Tang, Wei; Boioli, Francesca Nano Letters, Vol. 13, Issue 5 https://doi.org/10.1021/nl3022434	journal	October 2012
Majorana states in prismatic core-shell nanowires Manolescu, Andrei; Sitek, Anna; Osca, Javier Physical Review B, Vol. 96, Issue 12 https://doi.org/10.1103/physrevb.96.125435	journal	September 2017
Misleading fringes in TEM images and diffraction patterns of Si nanocrystallites Kohno, Hideo; Ozaki, Nobuhiko; Yoshida, Hideto Crystal Research and Technology, Vol. 38, Issue 12 https://doi.org/10.1002/crat.200310140	journal	November 2003
Odd electron diffraction patterns in silicon nanowires and silicon thin films explained by microtwins and nanotwins Cayron, Cyril; Den Hertog, Martien; Latu-Romain, Laurence Journal of Applied Crystallography, Vol. 42, Issue 2 https://doi.org/10.1107/s0021889808042131	journal	January 2009
Selective functionalization and loading of biomolecules in crystalline silicon nanotube field-effect-transistors Kwon, Soonshin; Chen, Zack C. Y.; Noh, Hyunwoo Nanoscale, Vol. 6, Issue 14 https://doi.org/10.1039/c4nr01508h	journal	January 2014
Flux periodic magnetoconductance oscillations in GaAs/InAs core/shell nanowires Gül, Ö.; Demarina, N.; Blömers, C. Physical Review B, Vol. 89, Issue 4 https://doi.org/10.1103/physrevb.89.045417	journal	January 2014
Enhanced spin–orbit coupling in core/shell nanowires Furthmeier, Stephan; Dirnberger, Florian; Gmitra, Martin Nature Communications, Vol. 7, Issue 1 https://doi.org/10.1038/ncomms12413	journal	August 2016
Resistivity and surface states density of n- and p-type silicon nanowires Vaurette, F.; Nys, J. P.; Deresmes, D. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 26, Issue 3 https://doi.org/10.1116/1.2908438	journal	January 2008
Strong spin-orbit interaction and g -factor renormalization of hole spins in Ge/Si nanowire quantum dots Froning, F. N. M.; Rančić, M. J.; Hetényi, B. Physical Review Research, Vol. 3, Issue 1 https://doi.org/10.1103/physrevresearch.3.013081	journal	January 2021
Compositional Varied Core–Shell InGaP Nanowires Grown by Metal–Organic Chemical Vapor Deposition Gao, Han; Sun, Wen; Sun, Qiang Nano Letters, Vol. 19, Issue 6 https://doi.org/10.1021/acs.nanolett.9b00915	journal	May 2019
Interface Charge Induced p-Type Characteristics of Aligned Si _{1− x} Ge _x Nanowires Seong, Han-Kyu; Jeon, Eun-Kyoung; Kim, Myoung-Ha Nano Letters, Vol. 8, Issue 11 https://doi.org/10.1021/nl8016362	journal	November 2008
Extraction of Doping Concentration and Interface State Density in Silicon Nanowires Park, Jong Tae; Kim, Jin Young; Islam, M. Saif IEEE Transactions on Nanotechnology, Vol. 10, Issue 5 https://doi.org/10.1109/tnano.2010.2094203	journal	September 2011
Carrier Mobility Enhancement of Tensile Strained Si and SiGe Nanowires via Surface Defect Engineering Ma, J. W.; Lee, W. J.; Bae, J. M. Nano Letters, Vol. 15, Issue 11 https://doi.org/10.1021/acs.nanolett.5b01634	journal	October 2015
Photogating in Low Dimensional Photodetectors Fang, Hehai; Hu, Weida Advanced Science, Vol. 4, Issue 12 https://doi.org/10.1002/advs.201700323	journal	October 2017
Advanced core/multishell germanium/silicon nanowire heterostructures: Morphology and transport Dayeh, S. A.; Gin, A. V.; Picraux, S. T. Applied Physics Letters, Vol. 98, Issue 16 https://doi.org/10.1063/1.3574537	journal	April 2011
Fabrication of ZnO/CdS core/shell nanowire arrays for efficient solar energy conversion Tak, Youngjo; Hong, Suk Joon; Lee, Jae Sung Journal of Materials Chemistry, Vol. 19, Issue 33 https://doi.org/10.1039/b904993b	journal	January 2009
Silicon–Germanium Nanowires: Chemistry and Physics in Play, from Basic Principles to Advanced Applications Amato, Michele; Palummo, Maurizia; Rurali, Riccardo Chemical Reviews, Vol. 114, Issue 2 https://doi.org/10.1021/cr400261y	journal	November 2013
InAs/InP Radial Nanowire Heterostructures as High Electron Mobility Devices Jiang, Xiaocheng; Xiong, Qihua; Nam, Sungwoo Nano Letters, Vol. 7, Issue 10 https://doi.org/10.1021/nl072024a	journal	October 2007
Tailoring Strain and Morphology of Core–Shell SiGe Nanowires by Low-Temperature Ge Condensation David, Thomas; Liu, Kailang; Ronda, Antoine Nano Letters, Vol. 17, Issue 12 https://doi.org/10.1021/acs.nanolett.7b02832	journal	November 2017
Thermal Stability and Surface Passivation of Ge Nanowires Coated by Epitaxial SiGe Shells Hu, Shu; Kawamura, Yoko; Huang, Kevin C. Y. Nano Letters, Vol. 12, Issue 3 https://doi.org/10.1021/nl204053w	journal	February 2012
Quantum‐Confinement‐Enhanced Thermoelectric Properties in Modulation‐Doped GaAs–AlGaAs Core–Shell Nanowires Fust, Sergej; Faustmann, Anton; Carrad, Damon J. Advanced Materials, Vol. 32, Issue 4 https://doi.org/10.1002/adma.201905458	journal	December 2019
Epitaxial Pb on InAs nanowires for quantum devices Kanne, Thomas; Marnauza, Mikelis; Olsteins, Dags Nature Nanotechnology, Vol. 16, Issue 7 https://doi.org/10.1038/s41565-021-00900-9	journal	May 2021
Gate Coupling and Charge Distribution in Nanowire Field Effect Transistors Khanal, D. R.; Wu, J. Nano Letters, Vol. 7, Issue 9 https://doi.org/10.1021/nl071330l	journal	August 2007
Quantum Interference in Radial Heterostructure Nanowires Jung, Minkyung; Lee, Joon Sung; Song, Woon Nano Letters, Vol. 8, Issue 10 https://doi.org/10.1021/nl801506w	journal	September 2008
Conduction channels of an InAs-Al nanowire Josephson weak link Goffman, M. F.; Urbina, C.; Pothier, H. New Journal of Physics, Vol. 19, Issue 9 https://doi.org/10.1088/1367-2630/aa7641	journal	September 2017
Oxide-Confined Formation of Germanium Nanowire Heterostructures for High-Performance Transistors Tang, Jianshi; Wang, Chiu-Yen; Xiu, Faxian ACS Nano, Vol. 5, Issue 7 https://doi.org/10.1021/nn2017777	journal	July 2011
Bicrystalline Silicon Nanowires Carim, A. H.; Lew, K. -K.; Redwing, J. M. Advanced Materials, Vol. 13, Issue 19 https://doi.org/10.1002/1521-4095(200110)13:19<1489::aid-adma1489>3.0.co;2-e	journal	September 2001
Facet-Selective Nucleation and Conformal Epitaxy of Ge Shells on Si Nanowires Nguyen, Binh-Minh; Swartzentruber, Brian; Ro, Yun Goo Nano Letters, Vol. 15, Issue 11 https://doi.org/10.1021/acs.nanolett.5b02313	journal	October 2015
Asymmetric strain relaxation in patterned SiGe layers: A means to enhance carrier mobilities in Si cap layers Buca, D.; Holländer, B.; Feste, S. Applied Physics Letters, Vol. 90, Issue 3 https://doi.org/10.1063/1.2431702	journal	January 2007
Novel Type-II InAs/AlSb Core-Shell Nanowires and Their Enhanced Negative Photocurrent for Efficient Photodetection Li, Handong; Alradhi, Hayfaa; Jin, Zhiming Advanced Functional Materials, Vol. 28, Issue 8 https://doi.org/10.1002/adfm.201705382	journal	December 2017
Coherently Strained Si–Si_xGe_1–x Core–Shell Nanowire Heterostructures Dillen, David C.; Wen, Feng; Kim, Kyounghwan Nano Letters, Vol. 16, Issue 1 https://doi.org/10.1021/acs.nanolett.5b03961	journal	November 2015
Surface States on Silicon and Germanium Surfaces Statz, H.; deMars, G. A.; Davis, L. Physical Review, Vol. 101, Issue 4 https://doi.org/10.1103/physrev.101.1272	journal	February 1956
Synthesis and Applications of III–V Nanowires Barrigón, Enrique; Heurlin, Magnus; Bi, Zhaoxia Chemical Reviews, Vol. 119, Issue 15 https://doi.org/10.1021/acs.chemrev.9b00075	journal	August 2019
Significant Enhancement of Hole Mobility in [110] Silicon Nanowires Compared to Electrons and Bulk Silicon Buin, A. K.; Verma, A.; Svizhenko, A. Nano Letters, Vol. 8, Issue 2 https://doi.org/10.1021/nl0727314	journal	January 2008
Controlling Catalyst-Free Formation and Hole Gas Accumulation by Fabricating Si/Ge Core–Shell and Si/Ge/Si Core−Double Shell Nanowires Zhang, Xiaolong; Jevasuwan, Wipakorn; Sugimoto, Yoshimasa ACS Nano, Vol. 13, Issue 11 https://doi.org/10.1021/acsnano.9b06821	journal	October 2019
Vapor-liquid-solid epitaxial growth of Si ₁₋ _x Ge _x alloy nanowires: Composition dependence on precursor reactivity and morphology control for vertical forests Choi, S. G.; Manandhar, P.; Picraux, S. T. Journal of Applied Physics, Vol. 118, Issue 1 https://doi.org/10.1063/1.4923355	journal	July 2015

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