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Formation of tubular conduction channel in a SiGe(P)/Si core/shell nanowire heterostructure

Journal Article · · APL Materials
DOI:https://doi.org/10.1063/5.0119654· OSTI ID:1898359
 [1];  [1];  [2];  [3];  [4];  [1];  [4];  [1];  [5];  [1];  [1]
  1. Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
  2. National Taiwan Univ., Taipei (Taiwan)
  3. Nanyang Technological Univ. (Singapore)
  4. Sandia National Lab. (SNL-CA), Livermore, CA (United States)
  5. National Taiwan Univ., Taipei (Taiwan); Taiwan Semiconductor Research Institute (Taiwan)
+ Show Author Affiliations
Realizing a tubular conduction channel within a one-dimensional core–shell nanowire (NW) enables better understanding of quantum phenomena and exploration of electronic device applications. Herein, we report the growth of a SiGe(P)/Si core/shell NW heterostructure using a chemical vapor deposition coupled with vapor–liquid–solid growth mechanism. The entire NW heterostructure behaves as a p-type semiconductor, which demonstrates that the high-density carriers are confined within the 4 nm-thick Si shell and form a tubular conduction channel. These findings are confirmed by both calculations and the gate-dependent current–voltage ( I d– V g) characteristics. Atomic resolution microscopic analyses suggest a coherent epitaxial core/shell interface where strain is released by forming dislocations along the axial direction of the NW heterostructure. Additional surface passivation achieved via growing a SiGe(P)/Si/SiGe core/multishell NW heterostructure suggests potential strategies to enhance the tubular carrier density, which could be further modified by improving multishell crystallinity and structural design.
Research Organization:
Los Alamos National Laboratory (LANL), Los Alamos, NM (United States)
Sponsoring Organization:
Ministry of Science and Technology; National Taiwan University; USDOE; USDOE Laboratory Directed Research and Development (LDRD) Program; USDOE National Nuclear Security Administration (NNSA)
Grant/Contract Number:
89233218CNA000001; NA0003525
OSTI ID:
1898359
Alternate ID(s):
OSTI ID: 1897335
Report Number(s):
LA-UR-22-21355
Journal Information:
APL Materials, Journal Name: APL Materials Journal Issue: 11 Vol. 10; ISSN 2166-532X
Publisher:
American Institute of Physics (AIP)Copyright Statement
Country of Publication:
United States
Language:
English

References (43)

Bicrystalline Silicon Nanowires journal September 2001
Novel Type-II InAs/AlSb Core-Shell Nanowires and Their Enhanced Negative Photocurrent for Efficient Photodetection journal December 2017
Quantum‐Confinement‐Enhanced Thermoelectric Properties in Modulation‐Doped GaAs–AlGaAs Core–Shell Nanowires journal December 2019
Photogating in Low Dimensional Photodetectors journal October 2017
Misleading fringes in TEM images and diffraction patterns of Si nanocrystallites journal November 2003
Synthesis and Applications of III–V Nanowires journal August 2019
Carrier Mobility Enhancement of Tensile Strained Si and SiGe Nanowires via Surface Defect Engineering journal October 2015
Facet-Selective Nucleation and Conformal Epitaxy of Ge Shells on Si Nanowires journal October 2015
Coherently Strained Si–SixGe1–x Core–Shell Nanowire Heterostructures journal November 2015
Tailoring Strain and Morphology of Core–Shell SiGe Nanowires by Low-Temperature Ge Condensation journal November 2017
Enhanced Electron Mobility in Nonplanar Tensile Strained Si Epitaxially Grown on SixGe1–xNanowires journal December 2017
Compositional Varied Core–Shell InGaP Nanowires Grown by Metal–Organic Chemical Vapor Deposition journal May 2019
Controlling Catalyst-Free Formation and Hole Gas Accumulation by Fabricating Si/Ge Core–Shell and Si/Ge/Si Core−Double Shell Nanowires journal October 2019
Germanium Nanowires and Core−Shell Nanostructures by Chemical Vapor Deposition of [Ge(C5H5)2] journal May 2004
Silicon–Germanium Nanowires: Chemistry and Physics in Play, from Basic Principles to Advanced Applications journal November 2013
Gate Coupling and Charge Distribution in Nanowire Field Effect Transistors journal August 2007
InAs/InP Radial Nanowire Heterostructures as High Electron Mobility Devices journal October 2007
Significant Enhancement of Hole Mobility in [110] Silicon Nanowires Compared to Electrons and Bulk Silicon journal January 2008
Thermal Stability and Surface Passivation of Ge Nanowires Coated by Epitaxial SiGe Shells journal February 2012
Direct Measurement of Coherency Limits for Strain Relaxation in Heteroepitaxial Core/Shell Nanowires journal October 2012
Quantum Interference in Radial Heterostructure Nanowires journal September 2008
Interface Charge Induced p-Type Characteristics of Aligned Si 1− x Ge x Nanowires journal November 2008
Composition-Tuned ZnO−CdSSe Core−Shell Nanowire Arrays journal June 2010
Oxide-Confined Formation of Germanium Nanowire Heterostructures for High-Performance Transistors journal July 2011
Epitaxial core–shell and core–multishell nanowire heterostructures journal November 2002
Enhanced spin–orbit coupling in core/shell nanowires journal August 2016
Epitaxial Pb on InAs nanowires for quantum devices journal May 2021
Fabrication of ZnO/CdS core/shell nanowire arrays for efficient solar energy conversion journal January 2009
Selective functionalization and loading of biomolecules in crystalline silicon nanotube field-effect-transistors journal January 2014
Hole gas accumulation in Si/Ge core–shell and Si/Ge/Si core–double shell nanowires journal January 2018
Asymmetric strain relaxation in patterned SiGe layers: A means to enhance carrier mobilities in Si cap layers journal January 2007
Advanced core/multishell germanium/silicon nanowire heterostructures: The Au-diffusion bottleneck journal July 2011
Advanced core/multishell germanium/silicon nanowire heterostructures: Morphology and transport journal April 2011
Vapor-liquid-solid epitaxial growth of Si 1− x Ge x alloy nanowires: Composition dependence on precursor reactivity and morphology control for vertical forests journal July 2015
Conduction channels of an InAs-Al nanowire Josephson weak link journal September 2017
Surface States on Silicon and Germanium Surfaces journal February 1956
Flux periodic magnetoconductance oscillations in GaAs/InAs core/shell nanowires journal January 2014
Majorana states in prismatic core-shell nanowires journal September 2017
Strong spin-orbit interaction and g -factor renormalization of hole spins in Ge/Si nanowire quantum dots journal January 2021
Odd electron diffraction patterns in silicon nanowires and silicon thin films explained by microtwins and nanotwins journal January 2009
How Can Si/Ge Core/Shell Nanowires Outperform Their Pure Material Counterparts? journal March 2020
Extraction of Doping Concentration and Interface State Density in Silicon Nanowires journal September 2011
Resistivity and surface states density of n- and p-type silicon nanowires
  • Vaurette, F.; Nys, J. P.; Deresmes, D.
  • Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 26, Issue 3 https://doi.org/10.1116/1.2908438
journal January 2008

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