Method of forming contacts for a back-contact solar cell
Patent
·
OSTI ID:1223691
Methods of forming contacts for solar cells are described. In one embodiment, a method includes forming a silicon layer above a substrate, forming and patterning a solid-state p-type dopant source on the silicon layer, forming an n-type dopant source layer over exposed regions of the silicon layer and over a plurality of regions of the solid-state p-type dopant source, and heating the substrate to provide a plurality of n-type doped silicon regions among a plurality of p-type doped silicon regions.
- Research Organization:
- SunPower Corporation, San Jose, CA (United States)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- FC36-07GO17043
- Assignee:
- SunPower Corporation (San Jose, CA)
- Patent Number(s):
- 9,166,079
- Application Number:
- 14/302,254
- OSTI ID:
- 1223691
- Resource Relation:
- Patent File Date: 2014 Jun 11
- Country of Publication:
- United States
- Language:
- English
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