Method of forming contacts for a back-contact solar cell

Patent · Tue Jul 15 04:00:00 EDT 2014

OSTI ID:1143683

Manning, Jane

Methods of forming contacts for solar cells are described. In one embodiment, a method includes forming a silicon layer above a substrate, forming and patterning a solid-state p-type dopant source on the silicon layer, forming an n-type dopant source layer over exposed regions of the silicon layer and over a plurality of regions of the solid-state p-type dopant source, and heating the substrate to provide a plurality of n-type doped silicon regions among a plurality of p-type doped silicon regions.

• Research Organization: SunPower Corporation, San Jose, CA (USA)
• Sponsoring Organization: USDOE
• Assignee: SunPower Corporation (San Jose, CA)
• Patent Number(s): 8,778,787
• Application Number: 13/930,078
• OSTI ID: 1143683
• Country of Publication: United States
• Language: English