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Title: Method of forming contacts for a back-contact solar cell

Abstract

Methods of forming contacts for back-contact solar cells are described. In one embodiment, a method includes forming a thin dielectric layer on a substrate, forming a polysilicon layer on the thin dielectric layer, forming and patterning a solid-state p-type dopant source on the polysilicon layer, forming an n-type dopant source layer over exposed regions of the polysilicon layer and over a plurality of regions of the solid-state p-type dopant source, and heating the substrate to provide a plurality of n-type doped polysilicon regions among a plurality of p-type doped polysilicon regions.

Inventors:
Publication Date:
Research Org.:
SunPower Corporation (San Jose, CA)
Sponsoring Org.:
USDOE
OSTI Identifier:
1088686
Patent Number(s):
8,492,253
Application Number:
12/959,199
Assignee:
SunPower Corporation (San Jose, CA)
DOE Contract Number:  
FC36-07GO17043
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY

Citation Formats

Manning, Jane. Method of forming contacts for a back-contact solar cell. United States: N. p., 2013. Web.
Manning, Jane. Method of forming contacts for a back-contact solar cell. United States.
Manning, Jane. Tue . "Method of forming contacts for a back-contact solar cell". United States. https://www.osti.gov/servlets/purl/1088686.
@article{osti_1088686,
title = {Method of forming contacts for a back-contact solar cell},
author = {Manning, Jane},
abstractNote = {Methods of forming contacts for back-contact solar cells are described. In one embodiment, a method includes forming a thin dielectric layer on a substrate, forming a polysilicon layer on the thin dielectric layer, forming and patterning a solid-state p-type dopant source on the polysilicon layer, forming an n-type dopant source layer over exposed regions of the polysilicon layer and over a plurality of regions of the solid-state p-type dopant source, and heating the substrate to provide a plurality of n-type doped polysilicon regions among a plurality of p-type doped polysilicon regions.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2013},
month = {7}
}

Patent:

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