Method of forming contacts for a back-contact solar cell
Patent
·
OSTI ID:1088686
Methods of forming contacts for back-contact solar cells are described. In one embodiment, a method includes forming a thin dielectric layer on a substrate, forming a polysilicon layer on the thin dielectric layer, forming and patterning a solid-state p-type dopant source on the polysilicon layer, forming an n-type dopant source layer over exposed regions of the polysilicon layer and over a plurality of regions of the solid-state p-type dopant source, and heating the substrate to provide a plurality of n-type doped polysilicon regions among a plurality of p-type doped polysilicon regions.
- Research Organization:
- SunPower Corporation (San Jose, CA)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- FC36-07GO17043
- Assignee:
- SunPower Corporation (San Jose, CA)
- Patent Number(s):
- 8,492,253
- Application Number:
- 12/959,199
- OSTI ID:
- 1088686
- Country of Publication:
- United States
- Language:
- English
Method for the Contact Separation of Electrically-Conducting Layers on the Back Contacts of Solar Cells and Corresponding Solar Cells
|
patent-application | February 2008 |
Transgenic monocot plants encoding beta-glucosidase and xylanase
|
patent-application | August 2009 |
Trench process and structure for backside contact solar cells with polysilicon doped regions
|
patent | October 2010 |
Back side contact solar cell with doped polysilicon regions
|
patent | December 2008 |
Similar Records
Method of forming contacts for a back-contact solar cell
Method of forming contacts for a back-contact solar cell
Method of forming emitters for a back-contact solar cell
Patent
·
Tue Oct 20 00:00:00 EDT 2015
·
OSTI ID:1088686
Method of forming contacts for a back-contact solar cell
Patent
·
Tue Jul 15 00:00:00 EDT 2014
·
OSTI ID:1088686
Method of forming emitters for a back-contact solar cell
Patent
·
Tue Sep 29 00:00:00 EDT 2015
·
OSTI ID:1088686