Piezoelectric force microscopy studies of PbTiO{sub 3} thin films grown via layer-by-layer gas phase reaction.

Journal Article · Thu Jan 01 00:00:00 EST 2009 · Appl. Phys. Lett.

DOI:https://doi.org/10.1063/1.3081120· OSTI ID:961721

Park, M; Hong, S; Kim, J; Kim, Y; Buehlmann, S; Kim, Y K; No, K; Imperial, Col

We fabricated 20 nm thick PbTiO{sub 3} films via reactive magnetron sputtering and studied the domain switching phenomena and retention properties using piezoresponse force microscopy. We found that multistep deposited PbTiO{sub 3} thin films showed 29% smaller rms roughness (2.5 versus 3.5 nm), 28% smaller coercive voltage (1.68 versus 2.32 V), 100% higher d{sub 33} value, and improved retention characteristic (89% versus 52% of remained poled domain area in 1280 min after poling) than single-step deposited PbTiO{sub 3} thin films. We attribute the improvement to the more complete chemical reaction between PbO and TiO{sub 2} during the film growth.

• Research Organization: Argonne National Lab. (ANL), Argonne, IL (United States)
• Sponsoring Organization: USDOE Office of Science (SC); Samsung Advanced Institute of Technology; Grant from the Korean Government
• DOE Contract Number: DE-AC02-06CH11357
• OSTI ID: 961721
• Report Number(s): ANL/MSD/JA-62968; APPLAB; TRN: US200923%%173
• Journal Information: Appl. Phys. Lett., Vol. 94, Issue 2009; ISSN 0003-6951
• Country of Publication: United States
• Language: ENGLISH

Related Subjects

36 MATERIALS SCIENCE
LEAD OXIDES
TITANIUM OXIDES
THIN FILMS
MAGNETRONS
SPUTTERING