Effect of deposition temperature of TiO{sub 2} on the piezoelectric property of PbTiO{sub 3} film grown by PbO gas phase reaction sputtering
- Department of Materials Science and Engineering, KAIST, Daejeon 305-701 (Korea, Republic of)
- Materials Science Division, Argonne National Laboratory, Lemont, Illinois 60439 (United States)
- Physics, Imperial College, London SW7 2AZ (United Kingdom)
- Semiconductor R and D Center, Samsung Electronics Co., Yongin 446-711 (Korea, Republic of)
A 17 nm thick PbTiO{sub 3} (PTO) films were fabricated via PbO gas phase reaction with TiO{sub 2} starting layer in a sputtering chamber. The influence of deposition temperature of TiO{sub 2} on the piezoelectric properties of PTO thin films was investigated. The remnant piezoresponse of PTO films nonlinearly increased as a function of TiO{sub 2} deposition temperature, which is correlated with the increase in average grain diameter of PTO film. As grain size increases, the restriction on remnant piezoresponse imposed by the grain boundary via coupling between local strain and polarization becomes less pronounced, which results in the increase in remnant piezoresponse. Furthermore, we found that the vertical shift in piezoresponse hysteresis loops is closely related to the residual stress state. A strong correlation between the negative vertical shift and the residual tensile stress reveals that residual stress on the resulting PTO film contributed to the asymmetric piezoelectric property.
- OSTI ID:
- 21476265
- Journal Information:
- Journal of Applied Physics, Vol. 107, Issue 10; Other Information: DOI: 10.1063/1.3406148; (c) 2010 American Institute of Physics; ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
CORRELATIONS
COUPLING
DEPOSITION
DIELECTRIC MATERIALS
GRAIN BOUNDARIES
GRAIN SIZE
HYSTERESIS
LAYERS
LEAD OXIDES
NANOSTRUCTURES
PIEZOELECTRICITY
POLARIZATION
RESIDUAL STRESSES
SPUTTERING
STRAINS
THIN FILMS
TITANATES
TITANIUM OXIDES
CHALCOGENIDES
ELECTRICITY
FILMS
LEAD COMPOUNDS
MATERIALS
MICROSTRUCTURE
OXIDES
OXYGEN COMPOUNDS
SIZE
STRESSES
TITANIUM COMPOUNDS
TRANSITION ELEMENT COMPOUNDS