Effect of deposition temperature of TiO{sub 2} on the piezoelectric property of PbTiO{sub 3} film grown by PbO gas phase reaction sputtering.
A 17 nm thick PbTiO{sub 3} (PTO) films were fabricated via PbO gas phase reaction with TiO{sub 2} starting layer in a sputtering chamber. The influence of deposition temperature of TiO{sub 2} on the piezoelectric properties of PTO thin films was investigated. The remnant piezoresponse of PTO films nonlinearly increased as a function of TiO{sub 2} deposition temperature, which is correlated with the increase in average grain diameter of PTO film. As grain size increases, the restriction on remnant piezoresponse imposed by the grain boundary via coupling between local strain and polarization becomes less pronounced, which results in the increase in remnant piezoresponse. Furthermore, we found that the vertical shift in piezoresponse hysteresis loops is closely related to the residual stress state. A strong correlation between the negative vertical shift and the residual tensile stress reveals that residual stress on the resulting PTO film contributed to the asymmetric piezoelectric property.
- Research Organization:
- Argonne National Lab. (ANL), Argonne, IL (United States)
- Sponsoring Organization:
- USDOE Office of Science (SC); National Research Foundation of Korea (NRF)
- DOE Contract Number:
- DE-AC02-06CH11357
- OSTI ID:
- 982669
- Report Number(s):
- ANL/MSD/JA-65963; TRN: US201015%%1276
- Journal Information:
- J. Appl. Phys., Vol. 107, Issue May 15, 2010
- Country of Publication:
- United States
- Language:
- ENGLISH
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