Piezoresponse force microscopy studies of PbTiO{sub 3} thin films grown via layer-by-layer gas phase reaction

Journal Article · Mon Mar 02 00:00:00 EST 2009 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.3081120· OSTI ID:21176015

Park, Moonkyu ^[1]; Hong, Seungbum ^[2]; Kim, Jiyoon; Kim, Yunseok; No, Kwangsoo ^[1]; Buehlmann, Simon ^[3]; Kim, Yong Kwan ^[4]

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1. Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, Daejeon 305-701 (Korea, Republic of)
2. Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439 (United States)
3. Department of Physics, Imperial College, London SW7 2AZ (United Kingdom)
4. Semiconductor R and D Center, Samsung Electronics Co., Ltd., Yongin 449-771 (Korea, Republic of)

We fabricated 20 nm thick PbTiO{sub 3} films via reactive magnetron sputtering and studied the domain switching phenomena and retention properties using piezoresponse force microscopy. We found that multistep deposited PbTiO{sub 3} thin films showed 29% smaller rms roughness (2.5 versus 3.5 nm), 28% smaller coercive voltage (1.68 versus 2.32 V), 100% higher d{sub 33} value, and improved retention characteristic (89% versus 52% of remained poled domain area in 1280 min after poling) than single-step deposited PbTiO{sub 3} thin films. We attribute the improvement to the more complete chemical reaction between PbO and TiO{sub 2} during the film growth.

• OSTI ID: 21176015
• Journal Information: Applied Physics Letters, Vol. 94, Issue 9; Other Information: DOI: 10.1063/1.3081120; (c) 2009 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CHEMICAL REACTIONS
CRYSTAL GROWTH
DEPOSITION
ELECTRIC POTENTIAL
FERROELECTRIC MATERIALS
LAYERS
LEAD OXIDES
MICROSCOPY
NANOSTRUCTURES
ROUGHNESS
SPUTTERING
THIN FILMS
TITANATES
TITANIUM OXIDES