Analysis of parametric drift of a MESFET-based GaAs MMIC due to 125[degrees]C storage

Conference · Wed Jan 01 00:00:00 EST 1992

OSTI ID:6970577

Dreike, P L; Barton, D L; Sandoval, C E

Microwave parameters drifted significantly for two out of twenty- nine GaAs MESFET-based MMICs during ten weeks of storage at 125[degrees]C and 150[degrees]C. Analysis using measured, post- storage, FET characteristics and the microwave behavior indicates that all of the FETs in the MMICs drifted, most likely due to contamination.

• Research Organization: Sandia National Labs., Albuquerque, NM (United States)
• Sponsoring Organization: USDOE; USDOE, Washington, DC (United States)
• DOE Contract Number: AC04-76DP00789
• OSTI ID: 6970577
• Report Number(s): SAND-92-2073C; CONF-930354-1; ON: DE93000715
• Resource Relation: Conference: International reliability physics conference, Atlanta, GA (United States), 22-25 Mar 1993
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
36 MATERIALS SCIENCE
FIELD EFFECT TRANSISTORS
TEMPERATURE DEPENDENCE
ELECTRICAL TESTING
GALLIUM ARSENIDES
MICROSTRUCTURE
SOLID STATE PHYSICS
ARSENIC COMPOUNDS
ARSENIDES
CRYSTAL STRUCTURE
GALLIUM COMPOUNDS
MATERIALS TESTING
NONDESTRUCTIVE TESTING
PHYSICS
PNICTIDES
SEMICONDUCTOR DEVICES
TESTING
TRANSISTORS
426000* - Engineering- Components
Electron Devices & Circuits- (1990-)
360606 - Other Materials- Physical Properties- (1992-)