Summary abstract: reactivity sputtered RuO/sub 2/ and Mo-O diffusion barriers

Technical Report · Tue Dec 01 00:00:00 EST 1987

OSTI ID:6845006

So, F C; Kolawa, E; Zhao, X; Pan, E T; Nicolet, M

Diffusion barriers are indispensable in present very large scale integrated (VLSI) contact technologies to preserve the integrity of shallow junctions and Schottky barriers from aluminum spiking during postmetallization processing. While a mammoth effort has been devoted to refractory metal nitrides, little attention is paid to the suitability of thin films of conducting transition-metal oxides for diffusion barrier applications. This attitude probably springs from the fact that most transition-metal oxides are electrically insulating. There are, however, transition-metal oxides that exhibit conductivities at room temperatures. One type of conducting oxide has an oxygen to metal ratio of 2. Two groups can be distinguished. The first one consists of the dioxides of the platinum-group metals which crystallize in the rutile structure: ruthenium dioxide, osmium dioxide, iridium dioxide, and rhodium dioxide. Among the four, RuO/sub 2/ is reported to possess the lowest bulk resistivity. The other class is made up of the dioxides that adopt distorted variants of the rutile structure: CrO/sub 2/, molybdenum dioxide, and WO/sub 2/. Single crystals of MoO/sub 2/ are monoclinic and have a room-temperature resistivity of approx. 90 micro ohms sq. cm. This report summarizes the important aspects of the deposition behavior of RuO/sub 2/ and Mo-O films formed by radio-frequency (rf) reactive sputtering and their diffusion barrier properties against interdiffusion in aluminum-silicon couples.

• Research Organization: California Inst. of Tech., Pasadena (USA)
• OSTI ID: 6845006
• Report Number(s): AD-A-194260/6/XAB
• Resource Relation: Other Information: Pub. in Jnl. of Vacuum Science and Technology, Vol. B5, No. 6, 1748-1749(Nov-Dec 1987)
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
42 ENGINEERING
INTEGRATED CIRCUITS
ELECTRIC CONTACTS
MOLYBDENUM OXIDES
DIFFUSION BARRIERS
RUTHENIUM OXIDES
METALS
NITRIDES
PLATINUM METALS
REFRACTORY METALS
THIN FILMS
ALLOYS
CHALCOGENIDES
ELECTRICAL EQUIPMENT
ELECTRONIC CIRCUITS
ELEMENTS
EQUIPMENT
FILMS
MICROELECTRONIC CIRCUITS
MOLYBDENUM COMPOUNDS
NITROGEN COMPOUNDS
OXIDES
OXYGEN COMPOUNDS
PNICTIDES
REFRACTORY METAL COMPOUNDS
RUTHENIUM COMPOUNDS
TRANSITION ELEMENT COMPOUNDS
TRANSITION ELEMENTS
360204* - Ceramics
Cermets
& Refractories- Physical Properties
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