Giant magnetoresistive structures based on CrO{sub 2} with epitaxial RuO{sub 2} as the spacer layer

Journal Article · Sun May 15 04:00:00 EDT 2005 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.1855532· OSTI ID:20709703

Miao, G X; Gupta, A; Sims, H; Butler, W H; Ghosh, S; Gang, Xiao ^[1]

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1. Physics Department, Brown University, Providence, Rhode Island 02912 (United States)

Epitaxial ruthenium dioxide (RuO{sub 2})/chromium dioxide(CrO{sub 2}) thin film heterostructures have been grown on (100)-TiO{sub 2} substrates by chemical vapor deposition. Both current-in-plane (CIP) and current-perpendicular-to-plane (CPP) giant magnetoresistive stacks were fabricated with either Co or another epitaxial CrO{sub 2} layer as the top electrode. The Cr{sub 2}O{sub 3} barrier, which forms naturally on CrO{sub 2} surfaces, is no longer present after the RuO{sub 2} deposition, resulting in a highly conductive interface that has a resistance at least four orders of magnitude lower. However, only very limited magnetoresistance (MR) was observed. Such low MR is due to the appearance of a chemically and magnetically disordered layer at the CrO{sub 2} and RuO{sub 2} interfaces when Cr{sub 2}O{sub 3} is transformed into rutile structures during its intermixing with RuO{sub 2}.

• OSTI ID: 20709703
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 10 Vol. 97; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CHEMICAL VAPOR DEPOSITION
CHROMIUM OXIDES
ELECTRODES
EPITAXY
FERROMAGNETIC MATERIALS
HYSTERESIS
INTERFACES
LAYERS
MAGNETORESISTANCE
RUTHENIUM OXIDES
RUTILE
SUBSTRATES
THIN FILMS
TITANIUM OXIDES