Boron enhanced diffusion due to high energy ion-implantation and its suppression by using RTA process
- NEC Corp., Sagamihara, Kanagawa (Japan). ULSI Device Development Labs.
SIMS measurements revealed that high energy boron-implantation causes transient enhanced diffusion (TED) of a shallow dopant profile due to Si interstitials even for a relatively low dose of {approximately}2E13cm{sup {minus}2}. By systematic analysis, it is found that this anomalous diffusion is most significant in 700--800 C annealing, and it takes place in the initial stage (less than 30 sec for 800 C) of annealing. Moreover, this anomalous diffusion is more considerable than the enhanced diffusion during oxidation (OED) in practical device fabrication processes. It is found that rapid thermal annealing (RTA) at 1,000--1,100 C is effective for suppressing the transient enhanced diffusion and realizing a shallow channel profile for deep sub-micron devices.
- OSTI ID:
- 375955
- Report Number(s):
- CONF-941144-; ISBN 1-55899-255-3; TRN: IM9642%%43
- Resource Relation:
- Conference: Fall meeting of the Materials Research Society (MRS), Boston, MA (United States), 28 Nov - 9 Dec 1994; Other Information: PBD: 1995; Related Information: Is Part Of Beam-solid interactions for materials synthesis and characterization; Jacobson, D.C. [ed.] [AT and T Bell Labs., Murray Hill, NJ (United States)]; Luzzi, D.E. [ed.] [Univ. of Pennsylvania, Philadelphia, PA (United States)]; Heinz, T.F. [ed.] [Columbia Univ., New York, NY (United States)]; Iwaki, Masaya [ed.] [Inst. of Physical and Chemical Research, Wako, Saitama (Japan)]; PB: 763 p.; Materials Research Society symposium proceedings, Volume 354
- Country of Publication:
- United States
- Language:
- English
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