Low energy boron implantation in silicon: (1) reduction of channeling tail by careful alignments. (2) Transient diffusion during rapid thermal annealing

Thesis/Dissertation · Tue Jan 01 00:00:00 EST 1985

OSTI ID:5515592

Cho, K

An attempt was made to minimize the channeling tail by implantation along a random equivalent direction following a careful alignment of the target. In order to analytically determine the random equivalent directions, critical angles for channeling were mapped on a stereogram. Boron ions with energies of 17 and 45 keV are implanted along specified directions determined from the map. The depth distribution of the dopant is profiled by SIMS and the effects of water orientation upon the channeling tail are noted. Industrial common use of a 7/sup 0/ tilt is not optimum. However, implantation with the wafer tilted at 5.5 +/- 0.5/sup 0/ from the surface normal and rotated at 7.0 +/- 0.5/sup 0/ from a (100) plane shows the least channel-tail compared to implantation along other directions. Rapid thermal annealing (RTA) is a promising annealing method for shallow junction formation. Transient enhanced diffusion of implanted boron is observed. Two different mechanisms for the boron diffusion enhancement are suggested; namely the fast diffusion of boron interstitials or the enhancement by point defects generated during RTA. However, no experimental evidence exists so far.

• Research Organization: North Carolina Univ., Chapel Hill (USA)
• OSTI ID: 5515592
• Resource Relation: Other Information: Thesis (Ph. D.)
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
42 ENGINEERING
SEMICONDUCTOR JUNCTIONS
CHANNELING
SILICON
ION IMPLANTATION
ANNEALING
BORON IONS
KEV RANGE 10-100
CHARGED PARTICLES
ELEMENTS
ENERGY RANGE
HEAT TREATMENTS
IONS
JUNCTIONS
KEV RANGE
SEMIMETALS
360605* - Materials- Radiation Effects
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