Reverse annealing and low-temperature diffusion of boron in boron-implanted silicon

Journal Article · Wed Jun 01 04:00:00 EDT 1988 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.340328· OSTI ID:5254390

Huang, J; Fan, D; Jaccodine, R J

Low-temperature annealing (525 /sup 0/C--800 /sup 0/C) of 50-keV, 1 x 10/sup 15/-cm/sup -2/, boron-implanted silicon was studied with the emphasis on the mechanisms responsible for the reverse annealing as well as the enhanced diffusion of the implanted boron. The electrical properties of boron-implanted silicon were analyzed with Hall measurement. Boron depth profiles were also measured using secondary-ion mass spectrometry. These results were then correlated with cross-section transmission electron microscopy studies and deep-level transient spectroscopy studies. It is shown that reverse annealing is possibly due to boron-silicon interstitial complexes, rather than the formation of the commonly observed rodlike defects or precipitates. On the other hand, the enhanced tail diffusion of boron is found to be most likely associated with self-interstitials. Consequently, vacancy trapping of the silicon interstitial component may account for both the charge carrier recovery and the ending of the enhanced tail diffusion of implanted boron.

• Research Organization: Sherman Fairchild Center for Solid State Studies, Lehigh University, Bethlehem, Pennsylvania 18015
• OSTI ID: 5254390
• Journal Information: J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 63:11; ISSN JAPIA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360602* -- Other Materials-- Structure & Phase Studies
ANNEALING
BORON
DATA
DEEP LEVEL TRANSIENT SPECTROSCOPY
DEPTH DOSE DISTRIBUTIONS
DIFFUSION
ELECTRICAL PROPERTIES
ELECTRON MICROSCOPY
ELEMENTS
EXPERIMENTAL DATA
HEAT TREATMENTS
HIGH TEMPERATURE
IMPURITIES
INFORMATION
ION IMPLANTATION
MASS SPECTROSCOPY
MICROSCOPY
NUMERICAL DATA
PHYSICAL PROPERTIES
RADIATION DOSE DISTRIBUTIONS
SEMIMETALS
SILICON
SPATIAL DOSE DISTRIBUTIONS
SPECTROSCOPY
THERMAL DIFFUSION
TRANSMISSION ELECTRON MICROSCOPY
VERY HIGH TEMPERATURE