Reverse annealing and low-temperature diffusion of boron in boron-implanted silicon
Low-temperature annealing (525 /sup 0/C--800 /sup 0/C) of 50-keV, 1 x 10/sup 15/-cm/sup -2/, boron-implanted silicon was studied with the emphasis on the mechanisms responsible for the reverse annealing as well as the enhanced diffusion of the implanted boron. The electrical properties of boron-implanted silicon were analyzed with Hall measurement. Boron depth profiles were also measured using secondary-ion mass spectrometry. These results were then correlated with cross-section transmission electron microscopy studies and deep-level transient spectroscopy studies. It is shown that reverse annealing is possibly due to boron-silicon interstitial complexes, rather than the formation of the commonly observed rodlike defects or precipitates. On the other hand, the enhanced tail diffusion of boron is found to be most likely associated with self-interstitials. Consequently, vacancy trapping of the silicon interstitial component may account for both the charge carrier recovery and the ending of the enhanced tail diffusion of implanted boron.
- Research Organization:
- Sherman Fairchild Center for Solid State Studies, Lehigh University, Bethlehem, Pennsylvania 18015
- OSTI ID:
- 5254390
- Journal Information:
- J. Appl. Phys.; (United States), Vol. 63:11
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
BORON
ION IMPLANTATION
THERMAL DIFFUSION
SILICON
ELECTRICAL PROPERTIES
IMPURITIES
ANNEALING
DEEP LEVEL TRANSIENT SPECTROSCOPY
DEPTH DOSE DISTRIBUTIONS
EXPERIMENTAL DATA
HIGH TEMPERATURE
MASS SPECTROSCOPY
TRANSMISSION ELECTRON MICROSCOPY
VERY HIGH TEMPERATURE
DATA
DIFFUSION
ELECTRON MICROSCOPY
ELEMENTS
HEAT TREATMENTS
INFORMATION
MICROSCOPY
NUMERICAL DATA
PHYSICAL PROPERTIES
RADIATION DOSE DISTRIBUTIONS
SEMIMETALS
SPATIAL DOSE DISTRIBUTIONS
SPECTROSCOPY
360602* - Other Materials- Structure & Phase Studies