Ion channeling and post annealing effects on phosphorus implantation in silicon (100)

Thesis/Dissertation · Wed Jan 01 04:00:00 EST 1992

OSTI ID:7267897

Yu, Ning

In this work, two factors that affect the formation of a shallow junction of phosphorus (P) in Si(100) have been systematically investigated. One is the ion channeling effect during P implantation into Si(100). The other is the post annealing effect on redistribution and activation of implanted P. Regarding the channeling effect, a random equivalent direction has been calculated for P in Si(100). It has been demonstrated that the channeling tail of P profile can be effectively reduced by implanting P either along the random equivalent direction or through a thin SiO[sub 2] screen layer or into pre-amorphorized Si. However, the method of using random equivalent direction to reduce channeling tail becomes ineffective for implantation energies below 50 keV due to the channeling enhancement. Regarding the thermal annealing effect, it has been demonstrated that P profiles from random implants can be maintained shallower upon post annealing at 600-1050[degrees]C in comparison to channeled implants. Higher electrical activation of P can be achieved from a two-step anneal of 550[degrees]C plus 1050[degrees]C than from a one step anneal of 1050[degrees]C. Anomalous enhanced diffusion of P has been observed and explained in the light of thermal dissolution of point defect clusters. Secondary Ion Mass Spectrometry (SIMS) and Spreading Resistance Probe (SRP) have been utilized to determine the concentrations depth profiles of atomic and electrical P, respectively. Rutherford Backscattering Spectrometry and Channeling (RBS/channeling) has been used to evaluate Si crystal damage and regrowth.

• Research Organization: Houston Univ., TX (United States)
• OSTI ID: 7267897
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360601* -- Other Materials-- Preparation & Manufacture
360602 -- Other Materials-- Structure & Phase Studies
665000 -- Physics of Condensed Matter-- (1992-)
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ANNEALING
CHANNELING
CRYSTAL LATTICES
CRYSTAL STRUCTURE
ELEMENTS
HEAT TREATMENTS
ION CHANNELING
ION IMPLANTATION
NONMETALS
PHOSPHORUS
SEMIMETALS
SILICON
TEMPERATURE DEPENDENCE