The fraction of substitutional boron in silicon during ion implantation and thermal annealing
We present results from a kinetic Monte Carlo simulation of boron transient enhanced diffusion (TED) in silicon. Our approach avoids the use of phenomenological fits to experimental data by using a complete and self-consistent set of values for defect and dopant energetics derived mostly from {ital ab initio} calculations. The results predict that, during annealing of 40 keV B-implanted Si at 800{degree}C, there exists a time window during which all the implanted boron atoms are substitutional. At earlier or later times, the interactions between free silicon self-interstitials and boron atoms drive the growth of boron clusters and result in an inactive boron fraction. The results show that the majority of boron TED takes place during the growth period of interstitial clusters and not during their dissolution. {copyright} {ital 1998 American Institute of Physics.}
- OSTI ID:
- 627953
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 21 Vol. 72; ISSN APPLAB; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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