Effect of ramp rate and annealing temperature on boron transient diffusion in implanted silicon: kinetic Monte Carlo simulations

Conference · Wed Jun 17 04:00:00 EDT 1998

DOI:https://doi.org/10.1109/IIT.1998.813852· OSTI ID:3403

Caturla, M J ^[1]; Foad, M

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1. LLNL

We present results of recent kinetic Monte Carlo simulations of the effect of annealing time and ramp rate on boron transient enhanced diffusion (BTED) in low energy ion implanted silicon. The simulations use a database of defect and dopant energetics derived from first principle calculations. We discuss the complete atomistic details of defect and dopant clustering during the anneals, and the dependence of boron TED on ramp rate. The simulations provide a complete time history of the evolution of the active boron fraction during the anneal for a wide variety of conditions. We also studied the lateral spreading of the boron during the annealing for two different conditions, furnace anneal and ramp anneal.

• Research Organization: Lawrence Livermore National Laboratory, Livermore, CA
• Sponsoring Organization: USDOE Office of Energy Research (ER)
• DOE Contract Number: W-7405-ENG-48
• OSTI ID: 3403
• Report Number(s): UCRL-JC-132379; KC0202020; ON: DE00003403
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
Annealing
Boron
Computerized Simulation
Ion Implantation
Monte Carlo Method
Permeability
Silicon