Converting films for X-ray detectors, applied to amorphous silicon arrays

Book · Thu Dec 31 00:00:00 EST 1998

OSTI ID:323872

Ross, S ^[1]; Zentai, G ^[2]

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1. Argonne National Lab., IL (United States)
2. Optical Imaging Systems, inc., Northville, MI (United States)

This paper presents results from the on-going efforts to characterize semiconductor thin films for direct X-ray conversion. The authors deposit these thin films onto an amorphous silicon (a-Si:H) readout array with the overall goal of developing a large area X-ray detector for protein crystallography, and for other X-ray imaging fields.

• OSTI ID: 323872
• Report Number(s): CONF-971201-; TRN: 99:004404
• Resource Relation: Conference: 1997 fall meeting of the Materials Research Society, Boston, MA (United States), 1-5 Dec 1997; Other Information: PBD: 1998; Related Information: Is Part Of Semiconductors for room-temperature radiation detector applications 2; James, R.B. [ed.] [Sandia National Labs., Livermore, CA (United States)]; Schlesinger, T.E. [ed.] [Carnegie Mellon Univ., Pittsburgh, PA (United States)]; Siffert, P. [ed.] [Lab. PHASE/CNRS, Strasbourg (France)]; Dusi, W. [ed.] [Inst. TESRE/CNR, Bologna (Italy)]; Squillante, M.R. [ed.] [Radiation Monitoring Devices, Inc., Watertown, MA (United States)]; O`Connell, M. [ed.] [Dept. of Energy, Washington, DC (United States)]; Cuzin, M. [ed.] [LETI/CEA, Grenoble (France)]; PB: 681 p.; Materials Research Society symposium proceedings, Volume 487
• Country of Publication: United States
• Language: English

Related Subjects

44 INSTRUMENTATION
INCLUDING NUCLEAR AND PARTICLE DETECTORS
X-RAY DETECTION
SEMICONDUCTOR DETECTORS
READOUT SYSTEMS
USES
LEAD IODIDES
SILICON
THIN FILMS
EXPERIMENTAL DATA
CRYSTALLOGRAPHY