a-Si:H TFT-silicon hybrid low-energy x-ray detector

Journal Article · Wed Mar 15 00:00:00 EDT 2017 · IEEE Transactions on Electron Devices

DOI:https://doi.org/10.1109/TED.2017.2671365· OSTI ID:1367158

Shin, Kyung -Wook  ^[1]; Karim, Karim S. ^[2]

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1. Argonne National Lab. (ANL), Argonne, IL (United States)
2. Univ. of Waterloo, Waterloo, ON (Canada)

Direct conversion crystalline silicon X-ray imagers are used for low-energy X-ray photon (4-20 keV) detection in scientific research applications such as protein crystallography. In this paper, we demonstrate a novel pixel architecture that integrates a crystalline silicon X-ray detector with a thin-film transistor amorphous silicon pixel readout circuit. We describe a simplified two-mask process to fabricate a complete imaging array and present preliminary results that show the fabricated pixel to be sensitive to 5.89-keV photons from a low activity Fe-55 gamma source. Furthermore, this paper presented can expedite the development of high spatial resolution, low cost, direct conversion imagers for X-ray diffraction and crystallography applications.

• Research Organization: Argonne National Lab. (ANL), Argonne, IL (United States)
• Sponsoring Organization: Natural Sciences and Engineering Research Council of Canada (NSERC); USDOE
• Grant/Contract Number: AC02-06CH11357
• OSTI ID: 1367158
• Journal Information: IEEE Transactions on Electron Devices, Vol. 64, Issue 4; ISSN 0018-9383
• Publisher: IEEE
• Country of Publication: United States
• Language: English

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silicon radiation detectors
thin film transistors
x-ray image sensors