Thermal stability and degradation mechanism of WSiN/InGaP Schottky diodes
- NTT LSI Laboratories, 3-1, Morinosato Wakamiya, Atsugi-shi, Kanagawa 243-01 (Japan)
This article shows that the thermal stability of an InGaP Schottky contact can be improved by the refractory metal WSiN. Both the electrical characteristics and interfacial reactions were estimated by the {ital I}{endash}{ital V} (current{endash}voltage method), scanning electron microscopy, atomic force microscopy, and Auger electron spectroscopy. The WSiN/InGaP shows excellent {ital I}{endash}{ital V} characteristics, and the Schottky barrier height is 0.85 eV after annealing at 400{degree}C. Over 500{degree}C, an interfacial reaction occurs and the {ital I}{endash}{ital V} characteristic becomes leaky. We present an interfacial reaction model that shows In atoms condense and an eutectic alloy with W is formed. {copyright} {ital 1996 American Vacuum Society}
- OSTI ID:
- 280134
- Journal Information:
- Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena, Vol. 14, Issue 2; Other Information: PBD: Mar 1996
- Country of Publication:
- United States
- Language:
- English
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