Electrical characterization of Mo/n-GaAs/In Schottky diodes fabricated by rf sputtering
- Laboratorio de Semiconductores, Departamento de Fisica, Univ. de Oriente, Apartado 188, Cumana Sucre (Venezuela)
Mo Schottky contacts to n-GaAs were fabricated by deposition of Mo on the front side of (100) n-GaAs by rf sputtering, using an rf power of 200 watts with argon pressure of 6.5{times}10{sup {minus}3} Torr. Back ohmic contacts to n-GaAs were prepared by Sputter deposition of In using an rf power of 50 watts, followed by a 3.5 hour anneal in Ar atmosphere at 390{degree}C. The forward I{endash}V characteristics for the Mo/n-GaAs/In Schottky diode were non ideal over the temperature range 160{endash}350 K. The analysis of the forward I{endash}V/T data indicated that the forward current transport was controlled largely by generation-recombination (GR) in the depletion region and to a lesser extent by thermionic emission (TE) over the temperature range 260{endash}350 K. From the temperature variation of the TE reverse saturation current, the values of (1.04{plus_minus}0.02) V and (2.1{plus_minus}0.5){times}10{sup 6} Acm{sup {minus}2}K{sup {minus}2} for the zero bias zero temperature barrier height ({phi}{sub 0}) and the effective Richardson constant ({ital A}{sub eff}), respectively, were obtained. A value of ({minus}1.1{plus_minus}0.1) mV/K for the temperature coefficient ({beta}) of the barrier height was required to justify such a high value for {ital A}{sub eff}. A similar value of {beta} is supported by our C-V data in the same Mo/n-GaAs/In Schottky diode. {copyright} {ital 1996 American Institute of Physics.}
- OSTI ID:
- 451093
- Report Number(s):
- CONF-9409431-; ISSN 0094-243X; TRN: 9703M0097
- Journal Information:
- AIP Conference Proceedings, Vol. 378, Issue 1; Conference: Surfaces, vacuum and their applications, Cancun (Mexico), 19-23 Sep 1994; Other Information: PBD: Jul 1996
- Country of Publication:
- United States
- Language:
- English
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