Terahertz amplification in RTD-gated HEMTs with a grating-gate wave coupling topology

Journal Article · Mon Aug 08 00:00:00 EDT 2016 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4961053· OSTI ID:22594313

Condori Quispe, Hugo O.; Sensale-Rodriguez, Berardi ^[1]; Encomendero-Risco, Jimy J.; Xing, Huili Grace ^[2]

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1. The University of Utah, Salt Lake City, Utah 84112 (United States)
2. University of Notre Dame, Notre Dame, Indiana 46556 (United States)

We theoretically analyze the operation of a terahertz amplifier consisting of a resonant-tunneling-diode gated high-electron-mobility transistor (RTD-gated HEMT) in a grating-gate topology. In these devices, the key element enabling substantial power gain is the efficient coupling of terahertz waves into and out of plasmons in the RTD-gated HEMT channel, i.e., the gain medium, via the grating-gate itself, part of the active device, rather than by an external antenna structure as discussed in previous works, therefore potentially enabling terahertz amplification with associated power gains >40 dB.

• OSTI ID: 22594313
• Journal Information: Applied Physics Letters, Vol. 109, Issue 6; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
AMPLIFIERS
ANTENNAS
COUPLING
ELECTRON MOBILITY
GAIN
GRATINGS
PLASMONS
TOPOLOGY
TRANSISTORS
TUNNEL DIODES
TUNNEL EFFECT