Current-driven detection of terahertz radiation using a dual-grating-gate plasmonic detector

Journal Article · Mon Jun 30 04:00:00 EDT 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4886763· OSTI ID:22303891

Tanimoto, Y.; Satou, A.; Suemitsu, T.; Otsuji, T. ^[1]; Wang, Y.; Minamide, H.; Ito, H. ^[2]; Fateev, D. V.; Popov, V. V. ^[3]

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1. Research Institute of Electrical Communication, Tohoku University, 2-1-1 Katahira, Aoba-Ku, Sendai 980-8577 (Japan)
2. RIKEN Sendai, 519-1399 Aramaki Aoba, Aoba-ku, Sendai 980-0845 (Japan)
3. Kotelnikov Institute of Radio Engineering and Electronics (Saratov Branch), 410019 Saratov (Russian Federation)

We report on the detection of terahertz radiation by an on-chip planar asymmetric plasmonic structure in the frequency region above one terahertz. The detector is based on a field-effect transistor that has a dual grating gate structure with an asymmetric unit cell, which provides a geometrical asymmetry within the structure. Biasing the detector with a dc source-to-drain current in the linear region of the current-voltage characteristic introduces an additional asymmetry (electrical asymmetry) that enhances the detector responsivity by more than one order of magnitude (by a factor of 20) as compared with the unbiased case due to the cooperative effect of the geometrical and electrical asymmetries. In addition to the responsivity enhancement, we report a relatively low noise equivalent power and a peculiar non-monotonic dependence of the responsivity on the frequency, which results from the multi-plasmonic-cavity structure of the device.

• OSTI ID: 22303891
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 26 Vol. 104; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ASYMMETRY
CAVITY RESONATORS
COOPERATIVES
CURRENTS
DETECTION
ELECTRIC POTENTIAL
EQUIPMENT
FIELD EFFECT TRANSISTORS
NOISE
PLASMONS
THZ RANGE