Single-quantum-well grating-gated terahertz plasmon detectors
Journal Article
·
· Proposed for publication in Applied Physics Letters.
OSTI ID:973650
- UC Santa Barbara, Santa Barbara, CA
A grating-gated field-effect transistor fabricated from a single-quantum well in a high-mobility GaAs-AlGaAs heterostructure is shown to function as a continuously electrically tunable photodetector of terahertz radiation via excitation of resonant plasmon modes in the well. Different harmonics of the plasmon wave vector are mapped, showing different branches of the dispersion relation. As a function of temperature, the resonant response magnitude peaks at around 30 K. Both photovoltaic and photoconductive responses have been observed under different incident power and bias conditions.
- Research Organization:
- Sandia National Laboratories
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 973650
- Report Number(s):
- SAND2005-3218J
- Journal Information:
- Proposed for publication in Applied Physics Letters., Journal Name: Proposed for publication in Applied Physics Letters. Journal Issue: 19 Vol. 87; ISSN APPLAB; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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