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Giant effect of terahertz-radiation rectification in periodic graphene plasmonic structures

Journal Article · · Semiconductors
 [1]; ;  [2];  [1]
  1. Russian Academy of Sciences, Kotelnikov Institute of Radio Engineering and Electronics, Saratov Branch (Russian Federation)
  2. Chinese Academy of Sciences, Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO) (China)
The rectification of terahertz radiation due to plasmonic nonlinearities in a periodic graphene structure with a dual-grating gate and an asymmetric unit cell is considered. The influence of unit-cell asymmetry on the plasmonic rectification of the terahertz radiation near higher plasmonic resonances is considered for the cases of electron and hole conduction in parts of the graphene unit cell. The current responsivity of the rectification of terahertz radiation due to the plasmonic effects of differential charge-carrier drag and electron–hole ratchet is calculated.
OSTI ID:
22756248
Journal Information:
Semiconductors, Journal Name: Semiconductors Journal Issue: 11 Vol. 51; ISSN SMICES; ISSN 1063-7826
Country of Publication:
United States
Language:
English

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