Resonant tunneling assisted propagation and amplification of plasmons in high electron mobility transistors

Journal Article · Thu Jan 07 04:00:00 EST 2016 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4939076· OSTI ID:22494847

Bhardwaj, Shubhendu ^[1]; Sensale-Rodriguez, Berardi ^[2]; Xing, Huili Grace ^[3]; Rajan, Siddharth ^[4]; Volakis, John L.

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1. Electrical and Computer Engineering Department, The Ohio State University, Columbus, OH 43212 (United States)
2. Electrical and Computer Engineering Department, The University of Utah, Salt Lake City, UT 84112 (United States)
3. School of Electrical and Computer Engineering and Department of Materials Science and Engineering, Cornell University, Ithaca, NY 14853 (United States)
4. Electrical and Computer Engineering Department and Materials Science Engineering Department, The Ohio State University, Columbus, OH 43212 (United States)

A rigorous theoretical and computational model is developed for the plasma-wave propagation in high electron mobility transistor structures with electron injection from a resonant tunneling diode at the gate. We discuss the conditions in which low-loss and sustainable plasmon modes can be supported in such structures. The developed analytical model is used to derive the dispersion relation for these plasmon-modes. A non-linear full-wave-hydrodynamic numerical solver is also developed using a finite difference time domain algorithm. The developed analytical solutions are validated via the numerical solution. We also verify previous observations that were based on a simplified transmission line model. It is shown that at high levels of negative differential conductance, plasmon amplification is indeed possible. The proposed rigorous models can enable accurate design and optimization of practical resonant tunnel diode-based plasma-wave devices for terahertz sources, mixers, and detectors, by allowing a precise representation of their coupling when integrated with other electromagnetic structures.

• OSTI ID: 22494847
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 1 Vol. 119; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
ALGORITHMS
AMPLIFICATION
ANALYTICAL SOLUTION
COUPLING
DESIGN
DISPERSION RELATIONS
ELECTRON BEAM INJECTION
ELECTRON MOBILITY
LOSSES
MIXERS
NONLINEAR PROBLEMS
NUMERICAL SOLUTION
OPTIMIZATION
PLASMA WAVES
PLASMONS
POWER TRANSMISSION LINES
TRANSISTORS
TUNNEL DIODES
TUNNEL EFFECT