Monolithically integrated InGaAs/GaAs/AlGaAs quantum well laser grown by MOCVD on exact Ge/Si(001) substrate

Journal Article · Mon Aug 08 00:00:00 EDT 2016 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4961059· OSTI ID:22594308

Aleshkin, V. Ya.; Dubinov, A. A.; Krasilnik, Z. F.; Kudryavtsev, K. E.; Novikov, A. V.; Baidus, N. V.; Samartsev, I. V. ^[1]; Fefelov, A. G. ^[2]; Nekorkin, S. M. ^[3]; Pavlov, D. A.; Sushkov, A. A. ^[4]; Skorokhodov, E. V.; Shaleev, M. V.; Yablonskiy, A. N.; Yunin, P. A. ^[3]

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1. Physical-Technical Research Institute of Lobachevsky State University of Nizhny Novgorod, 603950 Nizhny Novgorod (Russian Federation)
2. FGUE “Salut,” 603950 Nizhny Novgorod (Russian Federation)
3. Institute for Physics of Microstructures of the Russian Academy of Sciences, 603950 Nizhny Novgorod (Russian Federation)
4. Lobachevsky State University of Nizhny Novgorod, 603950 Nizhny Novgorod (Russian Federation)

We report on realization of the InGaAs/GaAs/AlGaAs quantum well laser grown by metallorganic chemical vapor deposition on a virtual Ge-on-Si(001) substrate. The Ge buffer layer has been grown on a nominal Si(001) substrate by solid-source molecular beam epitaxy. Such Ge buffer possessed rather good crystalline quality and smooth surface and so provided the subsequent growth of the high-quality A{sub 3}B{sub 5} laser structure. The laser operation has been demonstrated under electrical pumping at 77 K in the continuous wave mode and at room temperature in the pulsed mode. The emission wavelengths of 941 nm and 992 nm have been obtained at 77 K and 300 K, respectively. The corresponding threshold current densities were estimated as 463 A/cm{sup 2} at 77 K and 5.5 kA/cm{sup 2} at 300 K.

• OSTI ID: 22594308
• Journal Information: Applied Physics Letters, Vol. 109, Issue 6; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ALUMINIUM ARSENIDES
BUFFERS
CHEMICAL VAPOR DEPOSITION
CURRENT DENSITY
ELECTRICAL PUMPING
GALLIUM ARSENIDES
GERMANIUM
INDIUM ARSENIDES
LASERS
MOLECULAR BEAM EPITAXY
MOLECULAR BEAMS
QUANTUM WELLS
SILICON
SUBSTRATES
SURFACES
TEMPERATURE RANGE 0273-0400 K
THRESHOLD CURRENT
VAPORS
WAVELENGTHS