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Title: Broadband control of emission wavelength of InAs/GaAs quantum dots by GaAs capping temperature

We investigated the effects of the GaAs capping temperature on the morphological and photoluminescence (PL) properties of InAs quantum dots (QDs) on GaAs(001). The broadband tuning of the emission wavelength from 1.1 to 1.3 μm was achieved at room temperature by only adjusting the GaAs capping temperature. As the capping temperature was decreased, the QD shrinkage due to In desorption and In-Ga intermixing during the capping process was suppressed. This led to QDs with a high aspect ratio, and resultantly, the emission wavelength shifted toward the longer-wavelength side. In addition, the linearly polarized PL intensity elucidated anisotropic characteristics reflecting the shape anisotropy of the embedded QDs, in which a marked change in polarization anisotropy occurred at capping temperatures lower than 460 °C.
Authors:
 [1] ;  [2] ; ;  [3]
  1. Center for Supports to Research and Education Activities, Kobe University, 1-1 Rokkodai, Nada, Kobe 657-8501 (Japan)
  2. (Japan)
  3. Department of Electrical and Electronic Engineering, Graduate School of Engineering, Kobe University, 1-1 Rokkodai, Nada, Kobe 657-8501 (Japan)
Publication Date:
OSTI Identifier:
22492819
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 118; Journal Issue: 15; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ANISOTROPY; ASPECT RATIO; CONTROL; DESORPTION; GALLIUM ARSENIDES; INDIUM ARSENIDES; PHOTOLUMINESCENCE; POLARIZATION; QUANTUM DOTS; SHAPE; TEMPERATURE RANGE 0273-0400 K; TUNING; WAVELENGTHS