Intersubband transitions in nonpolar GaN/Al(Ga)N heterostructures in the short- and mid-wavelength infrared regions
- University Grenoble-Alpes, 38000 Grenoble (France)
This paper assesses nonpolar m- and a-plane GaN/Al(Ga)N multi-quantum-wells grown on bulk GaN for intersubband optoelectronics in the short- and mid-wavelength infrared ranges. The characterization results are compared to those for reference samples grown on the polar c-plane, and are verified by self-consistent Schrödinger-Poisson calculations. The best results in terms of mosaicity, surface roughness, photoluminescence linewidth and intensity, as well as intersubband absorption are obtained from m-plane structures, which display room-temperature intersubband absorption in the range from 1.5 to 2.9 μm. Based on these results, a series of m-plane GaN/AlGaN multi-quantum-wells were designed to determine the accessible spectral range in the mid-infrared. These samples exhibit tunable room-temperature intersubband absorption from 4.0 to 5.8 μm, the long-wavelength limit being set by the absorption associated with the second order of the Reststrahlen band in the GaN substrates.
- OSTI ID:
- 22490760
- Journal Information:
- Journal of Applied Physics, Vol. 118, Issue 1; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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