Intersubband transitions in nonpolar and semipolar III-nitrides: Materials, devices, and applications

Mudiyanselage, Dinusha Herath; Wang, Dawei; Zhao, Yuji; Fu, Houqiang

doi:10.1063/5.0088021

Intersubband transitions in nonpolar and semipolar III-nitrides: Materials, devices, and applications

Journal Article · Tue Jun 07 00:00:00 EDT 2022 · Journal of Applied Physics

DOI:https://doi.org/10.1063/5.0088021· OSTI ID:1979067

^[1]; Wang, Dawei ^[2]; Zhao, Yuji ^[3]; ^[2]

Iowa State Univ., Ames, IA (United States); Arizona State Univ., Tempe, AZ (United States)
Iowa State Univ., Ames, IA (United States)
Rice Univ., Houston, TX (United States)

In the last two decades, the third-generation wide bandgap semiconductor III-nitrides have revolutionized a myriad of electronic and photonic devices and applications, including power electronics, extreme-environment electronics, RF amplifiers, and optoelectronics such as light-emitting diodes and laser diodes. Recently, III-nitride heterostructures (e.g., AlGaN/GaN) based intersubband transition (ISBT) has garnered considerable research interest for infrared (IR), terahertz (THz), and ultrafast optoelectronics (e.g., photodetectors and quantum cascade lasers) due to its large conduction band offset, large optical phonon energy, and promising room-temperature operation. This paper presents a comprehensive review on the recent progress and challenges of III-nitrides based ISBT from the perspectives of materials, structures, devices, and applications, with a focus on nonpolar and semipolar III-nitrides. Various device structures have been demonstrated for III-nitrides based ISBT, including quantum wells, dots, and wires, among which AlGaN/GaN quantum wells are the most widely used. The effects of device parameters, crystal orientations, and doping on the ISBT properties of AlGaN/GaN quantum wells are discussed. Although the room-temperature operation is still elusive, theoretical and experimental studies show that nonpolar and semipolar III-nitrides based ISBT exhibits tunable ISBT wavelength from far-IR to THz spectral range with higher efficiency compared with polar c-plane ISBT. This review can serve as a gateway to and an important reference for the recent progress and challenges of III-nitrides based ISBT and its potential applications in sensing, communication, ultrafast optoelectronics, and integrated photonics.

View Accepted Manuscript (DOE)

Research Organization:: Iowa State Univ., Ames, IA (United States); Energy Frontier Research Centers (EFRC) (United States). Ultra Materials for a Resilient, Smart Electricity Grid (ULTRA); Arizona State Univ., Tempe, AZ (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES); Army Research Office (ARO) PECASE

Grant/Contract Number:: SC0021230

OSTI ID:: 1979067

Alternate ID(s):: OSTI ID: 1871063

Journal Information:: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 21 Vol. 131; ISSN 0021-8979

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

References (94)

Intraband photodetection at 1.3–1.5 µm in self-organized GaN/AlN quantum dots Doyennette, L.; Vardi, A.; Guillot, F. physica status solidi (b), Vol. 243, Issue 15 https://doi.org/10.1002/pssb.200671610	journal	December 2006
Spontaneous emission from GaN/AlGaN terahertz quantum cascade laser grown on GaN substrate Terashima, Wataru; Hirayama, Hideki physica status solidi c, Vol. 8, Issue 7-8 https://doi.org/10.1002/pssc.201000878	journal	April 2011
Active region design of a terahertz GaN/ Al0.15Ga0.85N quantum cascade laser Sun, Greg; Soref, Richard A.; Khurgin, Jacob B. Superlattices and Microstructures, Vol. 37, Issue 2 https://doi.org/10.1016/j.spmi.2004.09.046	journal	February 2005
Intersubband energies in Al1−yInyN/Ga1−xInxN heterostructures with lattice constant close to aGaN Akabli, H.; Almaggoussi, A.; Abounadi, A. Superlattices and Microstructures, Vol. 52, Issue 1 https://doi.org/10.1016/j.spmi.2012.04.012	journal	July 2012
Quantum Transport in GaN/AlN Double-Barrier Heterostructure Nanowires Songmuang, R.; Katsaros, G.; Monroy, E. Nano Letters, Vol. 10, Issue 9 https://doi.org/10.1021/nl1017578	journal	August 2010
Intraband Absorption in Self-Assembled Ge-Doped GaN/AlN Nanowire Heterostructures Beeler, M.; Hille, P.; Schörmann, J. Nano Letters, Vol. 14, Issue 3 https://doi.org/10.1021/nl5002247	journal	February 2014
Terahertz semiconductor-heterostructure laser Köhler, Rüdeger; Tredicucci, Alessandro; Beltram, Fabio Nature, Vol. 417, Issue 6885 https://doi.org/10.1038/417156a	journal	May 2002
High-power portable terahertz laser systems Khalatpour, Ali; Paulsen, Andrew K.; Deimert, Chris Nature Photonics, Vol. 15, Issue 1 https://doi.org/10.1038/s41566-020-00707-5	journal	November 2020
Intersubband Transition in GaN/InGaN Multiple Quantum Wells Chen, G.; Wang, X. Q.; Rong, X. Scientific Reports, Vol. 5, Issue 1 https://doi.org/10.1038/srep11485	journal	June 2015
Sub-picosecond electron scattering time for ≃ 1.55 [micro sign]m intersubband transitions in GaN/AlGaN multiple quantum wells Gmachl, C.; Frolov, S. V.; Ng, H. M. Electronics Letters, Vol. 37, Issue 6 https://doi.org/10.1049/el:20010244	journal	January 2001
Sub-picosecond modulation by intersubband transition in ridge waveguide with GaN∕AlN quantum wells Iizuka, N.; Kaneko, K.; Suzuki, N. Electronics Letters, Vol. 40, Issue 15 https://doi.org/10.1049/el:20045434	journal	January 2004
GaN-based quantum dot infrared photodetector operating at 1.38 [micro sign]m Doyennette, L.; Nevou, L.; Tchernycheva, M. Electronics Letters, Vol. 41, Issue 19 https://doi.org/10.1049/el:20052598	journal	January 2005
Ultrafast intersubband relaxation (⩽150 fs) in AlGaN/GaN multiple quantum wells Iizuka, Norio; Kaneko, Kei; Suzuki, Nobuo Applied Physics Letters, Vol. 77, Issue 5 https://doi.org/10.1063/1.127073	journal	July 2000
Intersubband absorption at λ∼1.55 μm in well- and modulation-doped GaN/AlGaN multiple quantum wells with superlattice barriers Gmachl, Claire; Ng, Hock M.; George Chu, S. -N. Applied Physics Letters, Vol. 77, Issue 23 https://doi.org/10.1063/1.1332108	journal	December 2000
Intersubband absorption in degenerately doped GaN/AlxGa1−xN coupled double quantum wells Gmachl, Claire; Ng, Hock M.; Cho, Alfred Y. Applied Physics Letters, Vol. 79, Issue 11 https://doi.org/10.1063/1.1403277	journal	September 2001
Comparative study of ultrafast intersubband electron scattering times at ∼1.55 μm wavelength in GaN/AlGaN heterostructures Heber, J. D.; Gmachl, C.; Ng, H. M. Applied Physics Letters, Vol. 81, Issue 7 https://doi.org/10.1063/1.1500412	journal	August 2002
Intraband absorptions in GaN/AlN quantum dots in the wavelength range of 1.27–2.4 μm Moumanis, Kh.; Helman, A.; Fossard, F. Applied Physics Letters, Vol. 82, Issue 6 https://doi.org/10.1063/1.1543238	journal	February 2003
3.4-THz quantum cascade laser based on longitudinal-optical-phonon scattering for depopulation Williams, Benjamin S.; Callebaut, Hans; Kumar, Sushil Applied Physics Letters, Vol. 82, Issue 7 https://doi.org/10.1063/1.1554479	journal	February 2003
GaN/AlN-based quantum-well infrared photodetector for 1.55 μm Hofstetter, Daniel; Schad, Sven-Silvius; Wu, Hong Applied Physics Letters, Vol. 83, Issue 3 https://doi.org/10.1063/1.1594265	journal	July 2003
Simulation and design of GaN/AlGaN far-infrared (λ∼34 μm) quantum-cascade laser Jovanović, V. D.; Indjin, D.; Ikonić, Z. Applied Physics Letters, Vol. 84, Issue 16 https://doi.org/10.1063/1.1707219	journal	April 2004
Intraband absorption of doped GaN∕AlN quantum dots at telecommunication wavelengths Tchernycheva, M.; Nevou, L.; Doyennette, L. Applied Physics Letters, Vol. 87, Issue 10 https://doi.org/10.1063/1.2042540	journal	September 2005
Midinfrared intersubband absorption in lattice-matched AlInN∕GaN multiple quantum wells Nicolay, S.; Carlin, J. -F.; Feltin, E. Applied Physics Letters, Vol. 87, Issue 11 https://doi.org/10.1063/1.2045559	journal	September 2005
Intersubband photoconductivity at 1.6μm using a strain-compensated AlN∕GaN superlattice Baumann, E.; Giorgetta, F. R.; Hofstetter, D. Applied Physics Letters, Vol. 87, Issue 19 https://doi.org/10.1063/1.2126130	journal	November 2005
Monte Carlo simulation of hot phonon effects in resonant-phonon-assisted terahertz quantum-cascade lasers Lü, J. T.; Cao, J. C. Applied Physics Letters, Vol. 88, Issue 6 https://doi.org/10.1063/1.2172225	journal	February 2006
High-quality AlN∕GaN-superlattice structures for the fabrication of narrow-band 1.4 μm photovoltaic intersubband detectors Hofstetter, Daniel; Baumann, Esther; Giorgetta, Fabrizio R. Applied Physics Letters, Vol. 88, Issue 12 https://doi.org/10.1063/1.2185613	journal	March 2006
Room temperature demonstration of GaN∕AlN quantum dot intraband infrared photodetector at fiber-optics communication wavelength Vardi, A.; Akopian, N.; Bahir, G. Applied Physics Letters, Vol. 88, Issue 14 https://doi.org/10.1063/1.2186108	journal	April 2006
Polarization dependent loss in III-nitride optical waveguides for telecommunication devices Iizuka, Norio; Kaneko, Kei; Suzuki, Nobuo Journal of Applied Physics, Vol. 99, Issue 9 https://doi.org/10.1063/1.2195422	journal	May 2006
Near infrared absorption and room temperature photovoltaic response in AlN∕GaN superlattices grown by metal-organic vapor-phase epitaxy Baumann, E.; Giorgetta, F. R.; Hofstetter, D. Applied Physics Letters, Vol. 89, Issue 4 https://doi.org/10.1063/1.2234847	journal	July 2006
Short-wavelength intersubband electroabsorption modulation based on electron tunneling between GaN∕AlN coupled quantum wells Nevou, L.; Kheirodin, N.; Tchernycheva, M. Applied Physics Letters, Vol. 90, Issue 22 https://doi.org/10.1063/1.2745211	journal	May 2007
Near-infrared intersubband absorption in nonpolar cubic GaN∕AlN superlattices DeCuir, E. A.; Fred, E.; Manasreh, M. O. Applied Physics Letters, Vol. 91, Issue 4 https://doi.org/10.1063/1.2764557	journal	July 2007
Near infrared quantum cascade detector in GaN∕AlGaN∕AlN heterostructures Vardi, A.; Bahir, G.; Guillot, F. Applied Physics Letters, Vol. 92, Issue 1 https://doi.org/10.1063/1.2830704	journal	January 2008
Monte Carlo study of GaN versus GaAs terahertz quantum cascade structures Bellotti, Enrico; Driscoll, Kristina; Moustakas, Theodore D. Applied Physics Letters, Vol. 92, Issue 10 https://doi.org/10.1063/1.2894508	journal	March 2008
Cubic GaN∕AlN multiple quantum well photodetector DeCuir, E. A.; Manasreh, M. O.; Tschumak, Elena Applied Physics Letters, Vol. 92, Issue 20 https://doi.org/10.1063/1.2936279	journal	May 2008
Interband and intersubband optical characterization of semipolar (112¯2)-oriented GaN/AlN multiple-quantum-well structures Lahourcade, L.; Kandaswamy, P. K.; Renard, J. Applied Physics Letters, Vol. 93, Issue 11 https://doi.org/10.1063/1.2978250	journal	September 2008
Refractive-index nonlinearities of intersubband transitions in GaN/AlN quantum-well waveguides Li, Yan; Bhattacharyya, Anirban; Thomidis, Christos Journal of Applied Physics, Vol. 104, Issue 8 https://doi.org/10.1063/1.2996107	journal	October 2008
GaN/AlN short-period superlattices for intersubband optoelectronics: A systematic study of their epitaxial growth, design, and performance Kandaswamy, P. K.; Guillot, F.; Bellet-Amalric, E. Journal of Applied Physics, Vol. 104, Issue 9 https://doi.org/10.1063/1.3003507	journal	November 2008
High-speed operation of GaN/AlGaN quantum cascade detectors at λ≈1.55 μm Vardi, A.; Kheirodin, N.; Nevou, L. Applied Physics Letters, Vol. 93, Issue 19 https://doi.org/10.1063/1.3021376	journal	November 2008
Ultrafast relaxation and optical saturation of intraband absorption of GaN/AlN quantum dots Nevou, L.; Mangeney, J.; Tchernycheva, M. Applied Physics Letters, Vol. 94, Issue 13 https://doi.org/10.1063/1.3114424	journal	March 2009
Near-infrared intersubband absorption in molecular-beam epitaxy-grown lattice-matched InAlN/GaN superlattices Malis, O.; Edmunds, C.; Manfra, M. J. Applied Physics Letters, Vol. 94, Issue 16 https://doi.org/10.1063/1.3120551	journal	April 2009
Influence of polarization induced electric fields on the wavelength and the refractive index of intersubband transitions in AlN/GaN coupled double quantum wells Cen, L. B.; Shen, B.; Qin, Z. X. Journal of Applied Physics, Vol. 105, Issue 9 https://doi.org/10.1063/1.3124373	journal	May 2009
Tunability of intersubband absorption from 4.5 to 5.3 μm in a GaN/Al0.2Ga0.8N superlattices grown by metalorganic chemical vapor deposition Péré-Laperne, N.; Bayram, C.; Nguyen-Thê, L. Applied Physics Letters, Vol. 95, Issue 13 https://doi.org/10.1063/1.3242027	journal	September 2009
Midinfrared intersubband absorption in GaN/AlGaN superlattices on Si(111) templates Kandaswamy, P. K.; Machhadani, H.; Bougerol, C. Applied Physics Letters, Vol. 95, Issue 14 https://doi.org/10.1063/1.3242345	journal	October 2009
Effect of doping on the mid-infrared intersubband absorption in GaN/AlGaN superlattices grown on Si(111) templates Kandaswamy, P. K.; Machhadani, H.; Kotsar, Y. Applied Physics Letters, Vol. 96, Issue 14 https://doi.org/10.1063/1.3379300	journal	April 2010
Terahertz intersubband absorption in GaN/AlGaN step quantum wells Machhadani, H.; Kotsar, Y.; Sakr, S. Applied Physics Letters, Vol. 97, Issue 19 https://doi.org/10.1063/1.3515423	journal	November 2010
Two-color GaN/AlGaN quantum cascade detector at short infrared wavelengths of 1 and 1.7 μ m Sakr, S.; Giraud, E.; Dussaigne, A. Applied Physics Letters, Vol. 100, Issue 18 https://doi.org/10.1063/1.4707904	journal	April 2012
Far-infrared intersubband photodetectors based on double-step III-nitride quantum wells Sudradjat, Faisal F.; Zhang, Wei; Woodward, Jeffrey Applied Physics Letters, Vol. 100, Issue 24 https://doi.org/10.1063/1.4729470	journal	June 2012
A simplified GaN/AlGaN quantum cascade detector with an alloy extractor Sakr, S.; Giraud, E.; Tchernycheva, M. Applied Physics Letters, Vol. 101, Issue 25 https://doi.org/10.1063/1.4772501	journal	December 2012
GaN/AlGaN waveguide quantum cascade photodetectors at λ ≈ 1.55 μm with enhanced responsivity and ∼40 GHz frequency bandwidth Sakr, S.; Crozat, P.; Gacemi, D. Applied Physics Letters, Vol. 102, Issue 1 https://doi.org/10.1063/1.4775374	journal	January 2013
Systematic study of near-infrared intersubband absorption of polar and semipolar GaN/AlN quantum wells Machhadani, H.; Beeler, M.; Sakr, S. Journal of Applied Physics, Vol. 113, Issue 14 https://doi.org/10.1063/1.4801528	journal	April 2013
Non-polar m -plane intersubband based InGaN/(Al)GaN quantum well infrared photodetectors Pesach, A.; Gross, E.; Huang, C. -Y. Applied Physics Letters, Vol. 103, Issue 2 https://doi.org/10.1063/1.4813395	journal	July 2013
III-nitride quantum cascade detector grown by metal organic chemical vapor deposition Song, Yu; Bhat, Rajaram; Huang, Tzu-Yung Applied Physics Letters, Vol. 105, Issue 18 https://doi.org/10.1063/1.4901220	journal	November 2014
Intersubband transitions in nonpolar GaN/Al(Ga)N heterostructures in the short- and mid-wavelength infrared regions Lim, C. B.; Beeler, M.; Ajay, A. Journal of Applied Physics, Vol. 118, Issue 1 https://doi.org/10.1063/1.4926423	journal	July 2015
Quantum cascade emission in the III-nitride material system designed with effective interface grading Song, Alex Y.; Bhat, Rajaram; Allerman, Andrew A. Applied Physics Letters, Vol. 107, Issue 13 https://doi.org/10.1063/1.4932068	journal	September 2015
Crystal orientation dependent intersubband transition in semipolar AlGaN/GaN single quantum well for optoelectronic applications Fu, Houqiang; Lu, Zhijian; Huang, Xuanqi Journal of Applied Physics, Vol. 119, Issue 17 https://doi.org/10.1063/1.4948667	journal	May 2016
Terahertz intersubband photodetectors based on semi-polar GaN/AlGaN heterostructures Durmaz, Habibe; Nothern, Denis; Brummer, Gordie Applied Physics Letters, Vol. 108, Issue 20 https://doi.org/10.1063/1.4950852	journal	May 2016
Theoretical analysis of modulation doping effects on intersubband transition properties of semipolar AlGaN/GaN quantum well Fu, Houqiang; Chen, Hong; Huang, Xuanqi Journal of Applied Physics, Vol. 121, Issue 1 https://doi.org/10.1063/1.4972975	journal	January 2017
Density control of GaN quantum dots on AlN single crystal Tamariz, Sebastian; Callsen, Gordon; Grandjean, Nicolas Applied Physics Letters, Vol. 114, Issue 8 https://doi.org/10.1063/1.5083018	journal	February 2019
Thermoelectrically cooled THz quantum cascade laser operating up to 210 K Bosco, L.; Franckié, M.; Scalari, G. Applied Physics Letters, Vol. 115, Issue 1 https://doi.org/10.1063/1.5110305	journal	July 2019
Structural and optical properties of nonpolar m- and a- plane GaN/AlGaN heterostructures for narrow-linewidth mid-infrared intersubband transitions Monavarian, Morteza; Xu, Jiaming; Fireman, Micha N. Applied Physics Letters, Vol. 116, Issue 20 https://doi.org/10.1063/1.5143785	journal	May 2020
First observation of an extremely large‐dipole infrared transition within the conduction band of a GaAs quantum well West, L. C.; Eglash, S. J. Applied Physics Letters, Vol. 46, Issue 12 https://doi.org/10.1063/1.95742	journal	June 1985
Materials and growth issues for high-performance nonpolar and semipolar light-emitting devices Farrell, R. M.; Young, E. C.; Wu, F. Semiconductor Science and Technology, Vol. 27, Issue 2 https://doi.org/10.1088/0268-1242/27/2/024001	journal	January 2012
III-nitride semiconductors for intersubband optoelectronics: a review Beeler, M.; Trichas, E.; Monroy, E. Semiconductor Science and Technology, Vol. 28, Issue 7 https://doi.org/10.1088/0268-1242/28/7/074022	journal	June 2013
Investigation of the electronic transport in GaN nanowires containing GaN/AlN quantum discs Rigutti, Lorenzo; Jacopin, Gwénolé; Bugallo, Andres De Luna Nanotechnology, Vol. 21, Issue 42 https://doi.org/10.1088/0957-4484/21/42/425206	journal	September 2010
Effect of doping on the far-infrared intersubband transitions in nonpolar m -plane GaN/AlGaN heterostructures Lim, C. B.; Ajay, A.; Bougerol, C. Nanotechnology, Vol. 27, Issue 14 https://doi.org/10.1088/0957-4484/27/14/145201	journal	February 2016
Intersubband absorption in GaN nanowire heterostructures at mid-infrared wavelengths Ajay, A.; Blasco, R.; Polaczyński, J. Nanotechnology, Vol. 29, Issue 38 https://doi.org/10.1088/1361-6528/aacf55	journal	July 2018
GaN FinFETs and trigate devices for power and RF applications: review and perspective Zhang, Yuhao; Zubair, Ahmad; Liu, Zhihong Semiconductor Science and Technology, Vol. 36, Issue 5 https://doi.org/10.1088/1361-6641/abde17	journal	March 2021
GaN/AlGaN intersubband optoelectronic devices Machhadani, H.; Kandaswamy, P.; Sakr, S. New Journal of Physics, Vol. 11, Issue 12 https://doi.org/10.1088/1367-2630/11/12/125023	journal	December 2009
Phonon-assisted intersubband transitions in wurtzite GaN/In _x Ga _{1− x} N quantum wells Zhu, Jun; Ban, Shi-Liang; Ha, Si-Hua Chinese Physics B, Vol. 21, Issue 9 https://doi.org/10.1088/1674-1056/21/9/097301	journal	September 2012
Strain distribution in nitride quantum dot multilayers Chamard, V.; Schülli, T.; Sztucki, M. Physical Review B, Vol. 69, Issue 12 https://doi.org/10.1103/PhysRevB.69.125327	journal	March 2004
Systematic experimental and theoretical investigation of intersubband absorption in Ga N ∕ Al N quantum wells Tchernycheva, M.; Nevou, L.; Doyennette, L. Physical Review B, Vol. 73, Issue 12 https://doi.org/10.1103/PhysRevB.73.125347	journal	March 2006
Intersubband absorption of cubic GaN/Al(Ga)N quantum wells in the near-infrared to terahertz spectral range Machhadani, H.; Tchernycheva, M.; Sakr, S. Physical Review B, Vol. 83, Issue 7 https://doi.org/10.1103/PhysRevB.83.075313	journal	February 2011
Resonance Spectroscopy of Electronic Levels in a Surface Accumulation Layer Kamgar, A.; Kneschaurek, P.; Dorda, G. Physical Review Letters, Vol. 32, Issue 22 https://doi.org/10.1103/PhysRevLett.32.1251	journal	June 1974
Design and fabrication of quantum cascade laser structure based on III-Nitride semiconductors in the THz frequency range Terashima, W.; Hirayama, H. 2008 33rd International Conference on Infrared, Millimeter and Terahertz Waves (IRMMW-THz 2008) https://doi.org/10.1109/ICIMW.2008.4665723	conference	September 2008
All-Optical Switch Utilizing Intersubband Transition in GaN Quantum Wells Iizuka, N.; Kaneko, K.; Suzuki, N. IEEE Journal of Quantum Electronics, Vol. 42, Issue 8 https://doi.org/10.1109/JQE.2006.878189	journal	August 2006
Performance Improvement of AlN–GaN-Based Intersubband Detectors by Using Quantum Dots Hofstetter, Daniel; Di Francesco, Joab; Kandaswamy, Prem K. IEEE Photonics Technology Letters, Vol. 22, Issue 15 https://doi.org/10.1109/LPT.2010.2050057	journal	August 2010
Vertical GaN Power Devices: Device Principles and Fabrication Technologies—Part II Fu, Houqiang; Fu, Kai; Chowdhury, Srabanti IEEE Transactions on Electron Devices, Vol. 68, Issue 7 https://doi.org/10.1109/TED.2021.3083209	journal	July 2021
Vertical GaN Power Devices: Device Principles and Fabrication Technologies—Part I Fu, Houqiang; Fu, Kai; Chowdhury, Srabanti IEEE Transactions on Electron Devices, Vol. 68, Issue 7 https://doi.org/10.1109/TED.2021.3083239	journal	July 2021
Terahertz intersubband electroluminescence from GaN/AlGaN quantum cascade laser structure on AlGaN template Terashima, W.; Hirayama, H. 2011 36th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz 2011), 2011 International Conference on Infrared, Millimeter, and Terahertz Waves https://doi.org/10.1109/irmmw-THz.2011.6105201	conference	October 2011
Growth of thin AlInN∕GaInN quantum wells for applications to high-speed intersubband devices at telecommunication wavelengths Cywiński, G.; Skierbiszewski, C.; Fedunieiwcz-Żmuda, A. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 24, Issue 3 https://doi.org/10.1116/1.2200382	journal	January 2006
Resonant electron tunneling in GaN/Ga1−x AlxN(0001) strained structures with spontaneous polarization and piezoeffect Grinyaev, S. N.; Razzhuvalov, A. N. Physics of the Solid State, Vol. 43, Issue 3 https://doi.org/10.1134/1.1356136	journal	March 2001
The Utility of Droplet Elimination by Thermal Annealing Technique for Fabrication of GaN/AlGaN Terahertz Quantum Cascade Structure by Radio Frequency Molecular Beam Epitaxy Terashima, Wataru; Hirayama, Hideki Applied Physics Express, Vol. 3, Issue 12 https://doi.org/10.1143/APEX.3.125501	journal	November 2010
Resonant Tunneling Transport in a GaN/AlN Multiple-Quantum-Well Structure Sakr, Salam; Kotsar, Yulia; Tchernycheva, Maria Applied Physics Express, Vol. 5, Issue 5 https://doi.org/10.1143/APEX.5.052203	journal	May 2012
Feasibility Study on Ultrafast Nonlinear Optical Properties of 1.55-µ m Intersubband Transition in AlGaN/GaN Quantum Wells Suzuki, Nobuo; Iizuka, Norio Japanese Journal of Applied Physics, Vol. 36, Issue Part 2, No. 8A https://doi.org/10.1143/JJAP.36.L1006	journal	August 1997
Electron Scattering Rates in AlGaN/GaN Quantum Wells for 1.55-µm Inter-Subband Transition Suzuki, Nobuo; Iizuka, Norio Japanese Journal of Applied Physics, Vol. 37, Issue Part 2, No. 4A https://doi.org/10.1143/JJAP.37.L369	journal	April 1998
Effect of Polarization Field on Intersubband Transition in AlGaN/GaN Quantum Wells Suzuki, Nobuo; Iizuka, Norio Japanese Journal of Applied Physics, Vol. 38, Issue Part 2, No. 4A https://doi.org/10.1143/JJAP.38.L363	journal	April 1999
Optimization of Device Structures for Bright Blue Semipolar (10\bar1\bar1) Light Emitting Diodes via Metalorganic Chemical Vapor Deposition Zhao, Yuji; Sonada, Junichi; Koslow, Ingrid Japanese Journal of Applied Physics, Vol. 49, Issue 7 https://doi.org/10.1143/JJAP.49.070206	journal	July 2010
Toward ultimate efficiency: progress and prospects on planar and 3D nanostructured nonpolar and semipolar InGaN light-emitting diodes Zhao, Yuji; Fu, Houqiang; Wang, George T. Advances in Optics and Photonics, Vol. 10, Issue 1 https://doi.org/10.1364/AOP.10.000246	journal	January 2018
Integration of GaN/AlN all-optical switch with SiN/AlN waveguide utilizing spot-size conversion Iizuka, Norio; Yoshida, Haruhiko; Managaki, Nobuto Optics Express, Vol. 17, Issue 25 https://doi.org/10.1364/OE.17.023247	journal	January 2009
Electroabsorption and refractive index modulation induced by intersubband transitions in GaN/AlN multiple quantum wells Lupu, A.; Tchernycheva, M.; Kotsar, Y. Optics Express, Vol. 20, Issue 11 https://doi.org/10.1364/OE.20.012541	journal	January 2012
Mid-infrared intersubband absorption in strain-balanced non-polar (In)AlGaN/InGaN multi-quantum wells Nguyen, Trang; Dzuba, Brandon; Cao, Yang Optical Materials Express, Vol. 11, Issue 9 https://doi.org/10.1364/OME.434866	journal	January 2021
Sub-picosecond all-optical gate utilizing aN intersubband transition Iizuka, Norio; Kaneko, Kei; Suzuki, Nobuo Optics Express, Vol. 13, Issue 10 https://doi.org/10.1364/OPEX.13.003835	journal	January 2005
Room temperature operation of 1.55.MU.m wavelength-range GaN/AlN quantum well intersubband photodetectors Uchida, Hiroyuki; Matsui, Satoshi; Holmström, Petter IEICE Electronics Express, Vol. 2, Issue 22 https://doi.org/10.1587/elex.2.566	journal	January 2005
Green Semipolar (202̄1̄) InGaN Light-Emitting Diodes with Small Wavelength Shift and Narrow Spectral Linewidth Zhao, Yuji; Oh, Sang Ho; Wu, Feng Applied Physics Express, Vol. 6, Issue 6 https://doi.org/10.7567/APEX.6.062102	journal	June 2013
Short-wavelength, mid- and far-infrared intersubband absorption in nonpolar GaN/Al(Ga)N heterostructures Lim, Caroline B.; Beeler, Mark; Ajay, Akhil Japanese Journal of Applied Physics, Vol. 55, Issue 5S https://doi.org/10.7567/JJAP.55.05FG05	journal	April 2016

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