Intersubband transitions in nonpolar and semipolar III-nitrides: Materials, devices, and applications

Mudiyanselage, Dinusha Herath; Wang, Dawei; Zhao, Yuji; Fu, Houqiang

doi:10.1063/5.0088021

Title: Intersubband transitions in nonpolar and semipolar III-nitrides: Materials, devices, and applications

Journal Article · Tue Jun 07 00:00:00 EDT 2022 · Journal of Applied Physics

DOI:https://doi.org/10.1063/5.0088021· OSTI ID:1979067

^[1]; Wang, Dawei ^[1]; Zhao, Yuji ^[2];

^[1]

Iowa State Univ., Ames, IA (United States)
Rice Univ., Houston, TX (United States)

In the last two decades, the third-generation wide bandgap semiconductor III-nitrides have revolutionized a myriad of electronic and photonic devices and applications, including power electronics, extreme-environment electronics, RF amplifiers, and optoelectronics such as light-emitting diodes and laser diodes. Recently, III-nitride heterostructures (e.g., AlGaN/GaN) based intersubband transition (ISBT) has garnered considerable research interest for infrared (IR), terahertz (THz), and ultrafast optoelectronics (e.g., photodetectors and quantum cascade lasers) due to its large conduction band offset, large optical phonon energy, and promising room-temperature operation. This paper presents a comprehensive review on the recent progress and challenges of III-nitrides based ISBT from the perspectives of materials, structures, devices, and applications, with a focus on nonpolar and semipolar III-nitrides. Various device structures have been demonstrated for III-nitrides based ISBT, including quantum wells, dots, and wires, among which AlGaN/GaN quantum wells are the most widely used. The effects of device parameters, crystal orientations, and doping on the ISBT properties of AlGaN/GaN quantum wells are discussed. Although the room-temperature operation is still elusive, theoretical and experimental studies show that nonpolar and semipolar III-nitrides based ISBT exhibits tunable ISBT wavelength from far-IR to THz spectral range with higher efficiency compared with polar c-plane ISBT. This review can serve as a gateway to and an important reference for the recent progress and challenges of III-nitrides based ISBT and its potential applications in sensing, communication, ultrafast optoelectronics, and integrated photonics.

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Research Organization:: Iowa State Univ., Ames, IA (United States); Energy Frontier Research Centers (EFRC) (United States). Ultra Materials for a Resilient, Smart Electricity Grid (ULTRA); Arizona State Univ., Tempe, AZ (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES); Army Research Office (ARO) PECASE

Grant/Contract Number:: SC0021230; W911NF-19-1-0089

OSTI ID:: 1979067

Alternate ID(s):: OSTI ID: 1871063

Journal Information:: Journal of Applied Physics, Vol. 131, Issue 21; ISSN 0021-8979

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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