Crystal orientation dependent intersubband transition in semipolar AlGaN/GaN single quantum well for optoelectronic applications

Journal Article · Sat May 07 00:00:00 EDT 2016 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4948667· OSTI ID:22596936

Fu, Houqiang; Lu, Zhijian; Huang, Xuanqi; Chen, Hong; Zhao, Yuji ^[1]

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1. School of Electrical, Computer and Energy Engineering, Arizona State University, Tempe, Arizona 85287 (United States)

The optical properties of intersubband transition in a semipolar AlGaN/GaN single quantum well (SQW) are theoretically studied, and the results are compared with polar c-plane and nonpolar m-plane structures. The intersubband transition frequency, dipole matrix elements, and absorption spectra are calculated for SQW on different semipolar planes. It is found that SQW on a certain group of semipolar planes (55° < θ < 90° tilted from c-plane) exhibits low transition frequency and long wavelength response with high absorption quantum efficiency, which is attributed to the weak polarization-related effects. Furthermore, these semipolar SQWs show tunable transition frequency and absorption wavelength with different quantum well thicknesses, and stable device performance can be achieved with changing barrier thickness and Al compositions. All the results indicate that the semipolar AlGaN/GaN quantum wells are promising candidate for the design and fabrication of high performance low frequency and long wavelength optoelectronic devices.

• OSTI ID: 22596936
• Journal Information: Journal of Applied Physics, Vol. 119, Issue 17; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ABSORPTION
ABSORPTION SPECTRA
ALUMINIUM NITRIDES
COMPARATIVE EVALUATIONS
CRYSTALS
DIPOLES
GALLIUM NITRIDES
MATRIX ELEMENTS
OPTICAL PROPERTIES
OPTOELECTRONIC DEVICES
POLARIZATION
QUANTUM EFFICIENCY
QUANTUM WELLS
THICKNESS
WAVELENGTHS