Intersubband transitions in nonpolar GaN/Al(Ga)N heterostructures in the short- and mid-wavelength infrared regions

Journal Article · Tue Jul 07 04:00:00 EDT 2015 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4926423· OSTI ID:22490760

Lim, C. B.; Beeler, M.; Ajay, A.; Lähnemann, J.; Bellet-Amalric, E.; Monroy, E. ^[1]; Bougerol, C. ^[1]

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1. University Grenoble-Alpes, 38000 Grenoble (France)

This paper assesses nonpolar m- and a-plane GaN/Al(Ga)N multi-quantum-wells grown on bulk GaN for intersubband optoelectronics in the short- and mid-wavelength infrared ranges. The characterization results are compared to those for reference samples grown on the polar c-plane, and are verified by self-consistent Schrödinger-Poisson calculations. The best results in terms of mosaicity, surface roughness, photoluminescence linewidth and intensity, as well as intersubband absorption are obtained from m-plane structures, which display room-temperature intersubband absorption in the range from 1.5 to 2.9 μm. Based on these results, a series of m-plane GaN/AlGaN multi-quantum-wells were designed to determine the accessible spectral range in the mid-infrared. These samples exhibit tunable room-temperature intersubband absorption from 4.0 to 5.8 μm, the long-wavelength limit being set by the absorption associated with the second order of the Reststrahlen band in the GaN substrates.

• OSTI ID: 22490760
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 1 Vol. 118; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
ABSORPTION
COMPARATIVE EVALUATIONS
DESIGN
GALLIUM NITRIDES
PHOTOLUMINESCENCE
QUANTUM WELLS
ROUGHNESS
SUBSTRATES
SURFACES
TEMPERATURE RANGE 0273-0400 K
WAVELENGTHS