Investigation of narrow-band thermal emission from intersubband transitions in quantum wells

Journal Article · Mon Sep 14 00:00:00 EDT 2015 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4930030· OSTI ID:22489449

De Zoysa, M. ^[1]; Asano, T.; Inoue, T.; Mochizuki, K.; Noda, S. ^[1]

---

1. Department of Electronic Science and Engineering, Kyoto University, Katsura, Kyoto 615-8510 (Japan)

We investigate thermal emission from n-doped GaAs/AlGaAs quantum wells (QWs). Emission peaks with Lorentzian shapes (linewidth 11∼19 meV) that reflect transitions between the first and second conduction subbands are observed in the mid-infrared range. It is demonstrated that the emission characteristics can be tuned by modifying the QW parameters. The peak emissivity is increased from 0.3 to 0.9 by modifying the doping density, and the peak wavelength is tuned from 6 to 10 μm by changing the well width. The obtained results are useful for the design of narrow-band thermal emitters.

• OSTI ID: 22489449
• Journal Information: Journal of Applied Physics, Vol. 118, Issue 10; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
ALUMINIUM ARSENIDES
DESIGN
DOPED MATERIALS
EMISSION
EMISSIVITY
GALLIUM ARSENIDES
PEAKS
QUANTUM WELLS
SHAPE
WAVELENGTHS
WIDTH