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Extremely wide modulation bandwidth in a low threshold current strained quantum well laser

Journal Article · · Appl. Phys. Lett.; (United States)
DOI:https://doi.org/10.1063/1.99984· OSTI ID:6777795

Lasing characteristics of strained quantum well (QW) structures such as InGaAs/AlGaAs on GaAs and InGaAs/InAlAs on InP were analyzed by taking into account the band mixing effect in the valence band. A relaxation oscillation frequency f/sub r/, which gives a measure of the upper modulation frequency limit, was found increased three times in a 50 A In/sub 0.9/Ga/sub 0.1/As/In/sub 0.52/Al/sub 0.48/As QW structure compared with that in a 50 A GaAs/Al/sub 0.4/Ga/sub 0.6/As QW structure for the undoped case. One of the main factors for this improved frequency bandwidth is attributed to the reduced subband nonparabolicity as well as the reduced valence-band density of state in the strained QW structure. The corresponding lasing threshold current is one order of magnitude smaller than that of the GaAs/AlGaAs QW structure. With a p doping in the QW the f/sub r/ value increases, and the 3 dB cutoff frequency of about 90 GHz will be expected with an acceptor concentration of 5 x 10/sup 18/ cm/sup -3/ in the In/sub 0.9/Ga/sub 0.1/As/In/sub 0.52/Al/sub 0.48/As QW.

Research Organization:
Faculty of Engineering, Hiroshima University, Higashihiroshima 724, Japan
OSTI ID:
6777795
Journal Information:
Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 53:15; ISSN APPLA
Country of Publication:
United States
Language:
English