Extremely wide modulation bandwidth in a low threshold current strained quantum well laser
Journal Article
·
· Appl. Phys. Lett.; (United States)
Lasing characteristics of strained quantum well (QW) structures such as InGaAs/AlGaAs on GaAs and InGaAs/InAlAs on InP were analyzed by taking into account the band mixing effect in the valence band. A relaxation oscillation frequency f/sub r/, which gives a measure of the upper modulation frequency limit, was found increased three times in a 50 A In/sub 0.9/Ga/sub 0.1/As/In/sub 0.52/Al/sub 0.48/As QW structure compared with that in a 50 A GaAs/Al/sub 0.4/Ga/sub 0.6/As QW structure for the undoped case. One of the main factors for this improved frequency bandwidth is attributed to the reduced subband nonparabolicity as well as the reduced valence-band density of state in the strained QW structure. The corresponding lasing threshold current is one order of magnitude smaller than that of the GaAs/AlGaAs QW structure. With a p doping in the QW the f/sub r/ value increases, and the 3 dB cutoff frequency of about 90 GHz will be expected with an acceptor concentration of 5 x 10/sup 18/ cm/sup -3/ in the In/sub 0.9/Ga/sub 0.1/As/In/sub 0.52/Al/sub 0.48/As QW.
- Research Organization:
- Faculty of Engineering, Hiroshima University, Higashihiroshima 724, Japan
- OSTI ID:
- 6777795
- Journal Information:
- Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 53:15; ISSN APPLA
- Country of Publication:
- United States
- Language:
- English
Similar Records
Structural and electrophysical properties of In{sub 0.52}Al{sub 0.48}As/In{sub 0.53}Ga{sub 0.47}As/In{sub 0.52}Al{sub 0.48}As/InP HEMT nanoheterostructures with different combinations of InAs and GaAs inserts in quantum well
Electron spin relaxation time in (110) InGaAs/InAlAs quantum wells
Structural and electrical properties of InAlAs/InGaAs/InAlAs HEMT heterostructures on InP substrates with InAs inserts in quantum well
Journal Article
·
Fri May 15 00:00:00 EDT 2015
· Crystallography Reports
·
OSTI ID:22472323
Electron spin relaxation time in (110) InGaAs/InAlAs quantum wells
Journal Article
·
Mon Jul 14 00:00:00 EDT 2014
· Journal of Applied Physics
·
OSTI ID:22308716
Structural and electrical properties of InAlAs/InGaAs/InAlAs HEMT heterostructures on InP substrates with InAs inserts in quantum well
Journal Article
·
Fri Nov 14 23:00:00 EST 2014
· Crystallography Reports
·
OSTI ID:22472331
Related Subjects
42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
AMPLIFICATION
ARSENIC COMPOUNDS
ARSENIDES
CARRIER DENSITY
CURRENTS
DESIGN
ELECTRIC CURRENTS
ELECTRONIC STRUCTURE
GAIN
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INDIUM ARSENIDES
INDIUM COMPOUNDS
LASERS
MODULATION
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
THRESHOLD CURRENT
420300* -- Engineering-- Lasers-- (-1989)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
AMPLIFICATION
ARSENIC COMPOUNDS
ARSENIDES
CARRIER DENSITY
CURRENTS
DESIGN
ELECTRIC CURRENTS
ELECTRONIC STRUCTURE
GAIN
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INDIUM ARSENIDES
INDIUM COMPOUNDS
LASERS
MODULATION
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
THRESHOLD CURRENT