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Title: The effect of an excess of components on the electrical properties of indium-antimonide films

The causes of anomalous behavior of the Hall mobility of charge carriers as a result of a decrease in the measurement temperature from 300 K in indium-antimonide films obtained by the method of three temperatures are studied. It is shown experimentally that there exist drops in the “admissible” temperatures of evaporators of components and the substrate within which continuous conducting films are obtained. The optimal conditions for sample preparation for which the values of the mobility remain practically constant in the temperature range of 150–350 K are determined. On the basis of the comparison with optical-transmission spectra, it is concluded that there is a high concentration of defects in the films; these defects are related to deviation of the composition from stoichiometry and act as donor and acceptor centers. The presence of such defects makes it possible to explain the decrease in mobility in the films as the temperature is lowered.
Authors:
;  [1]
  1. National Research University “MEI” (Russian Federation)
Publication Date:
OSTI Identifier:
22470073
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 49; Journal Issue: 2; Other Information: Copyright (c) 2015 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ABSORPTION SPECTRA; ANTIMONIDES; CARRIER MOBILITY; CHARGE CARRIERS; COMPARATIVE EVALUATIONS; CONCENTRATION RATIO; ELECTRICAL PROPERTIES; FILMS; HALL EFFECT; INDIUM; SAMPLE PREPARATION; STOICHIOMETRY; SUBSTRATES; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 0065-0273 K; TEMPERATURE RANGE 0273-0400 K