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Title: Temperature switching of cavity modes in InN microcrystals

InN optical cavities supporting low-order whispering-gallery modes up to room temperature are formed by molecular-beam epitaxy on patterned substrates. The observed switching of the mode type with increasing temperature is explained in terms of changes in the optical parameters due to a shift of the absorption edge and modification of its shape. Modeling taking into account a variation in the refractive index reproduces the typical distributions of the electromagnetic-field intensity in the cavities.
Authors:
; ; ; ; ; ; ; ;  [1]
  1. Russian Academy of Sciences, Ioffe Physical–Technical Institute (Russian Federation)
Publication Date:
OSTI Identifier:
22469699
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 49; Journal Issue: 11; Other Information: Copyright (c) 2015 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ABSORPTION; COMPUTERIZED SIMULATION; CRYSTALS; ELECTROMAGNETIC FIELDS; INDIUM NITRIDES; MOLECULAR BEAM EPITAXY; REFRACTIVE INDEX; SUBSTRATES; TEMPERATURE RANGE 0273-0400 K; VARIATIONS