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Optical modes within III-nitride multiple quantum well microdisk cavities

Journal Article · · Applied Physics Letters
DOI:https://doi.org/10.1063/1.120573· OSTI ID:624840
; ; ;  [1]; ;  [2]; ; ;  [3];  [4]
  1. Department of Physics, Kansas State University, Manhattan, Kansas66506-2601 (United States)
  2. Department of Physics, Peking University, Beijing 100871, Peoples Republic of (China)
  3. Department of Electrical Engineering, Virginia Commonwealth University, Richmond, Virginia23284-3072 (United States)
  4. Department of Electrical and Computing Engineering, University of South Carolina, Columbia, South Carolina29208 (United States)

Optical resonance modes have been observed in optically pumped microdisk cavities fabricated from 50 {Angstrom}/50 {Angstrom} GaN/Al{sub x}Ga{sub 1{minus}x}N(x{approximately}0.07) and 45 {Angstrom}/45 {Angstrom} In{sub x}Ga{sub 1{minus}x}N/GaN(x{approximately}0.15) multiple quantum well structures. Microdisks, approximately 9 {mu}m in diameter and regularly spaced every 50 {mu}m, were formed by an ion beam etch process. Individual disks were pumped at 300 and 10 K with 290 nm laser pulses focused to a spot size much smaller than the disk diameter. Optical modes corresponding to (i) the radial mode type with a spacing of 49{endash}51 meV (both TE and TM) and (ii) the Whispering Gallery mode with a spacing of 15{endash}16 meV were observed in the GaN microdisk cavities. The spacings of these modes are consistent with those expected for modes within a resonant cavity of cylindrical symmetry, refractive index, and dimensions of the microdisks under investigation. The GaN-based microdisk cavity is compared with its GaAs counterpart and implications regarding future GaN-based microdisk lasers are discussed. {copyright} {ital 1998 American Institute of Physics.}

OSTI ID:
624840
Journal Information:
Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 13 Vol. 72; ISSN 0003-6951; ISSN APPLAB
Country of Publication:
United States
Language:
English

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