Observation of whispering gallery modes in nonpolar m-plane GaN microdisks
- Department of Materials, University of California, Santa Barbara, California 93106-5050 (United States)
We have fabricated nonpolar GaN/InGaN microdisks using band-gap selective photoelectrochemical etching. These microdisks have a smoother optical cavity than our previous c-plane microdisks, and they support whispering gallery modes with quality factors as high as 2000 after a focused ion beam treatment to the quantum wells. Because of the lack of a Stokes shift in the quantum wells of these m-plane disks, absorption losses play a much more significant role than in our earlier c-plane microdisks, and the light which couples into the modes is emission from the InGaN post rather than the quantum wells within the cavity.
- OSTI ID:
- 21294153
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 25 Vol. 94; ISSN APPLAB; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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