Growth and optical characteristics of high-quality ZnO thin films on graphene layers
- Department of Physics and Astronomy, and Institute of Applied Physics, Seoul National University, Seoul 151-747 (Korea, Republic of)
- Advanced Development Team, LED Business, Samsung Electronics Co., Ltd., San#24 Nongseo-Dong, Giheung-Gu, Yongin-City, Gyeonggi-Do 446–711 (Korea, Republic of)
- Department of Materials Science and Engineering, Seoul National University, Seoul 151–744 (Korea, Republic of)
- Department of Physics and Chemistry, Korea Military Academy, Seoul (Korea, Republic of)
We report the growth of high-quality, smooth, and flat ZnO thin films on graphene layers and their photoluminescence (PL) characteristics. For the growth of high-quality ZnO thin films on graphene layers, ZnO nanowalls were grown using metal-organic vapor-phase epitaxy on oxygen-plasma treated graphene layers as an intermediate layer. PL measurements were conducted at low temperatures to examine strong near-band-edge emission peaks. The full-width-at-half-maximum value of the dominant PL emission peak was as narrow as 4 meV at T = 11 K, comparable to that of the best-quality films reported previously. Furthermore, the stimulated emission of ZnO thin films on the graphene layers was observed at the low excitation energy of 180 kW/cm{sup 2} at room temperature. Their structural and optical characteristics were investigated using X-ray diffraction, transmission electron microscopy, and PL spectroscopy.
- OSTI ID:
- 22415244
- Journal Information:
- APL materials, Vol. 3, Issue 1; Other Information: (c) 2015 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 2166-532X
- Country of Publication:
- United States
- Language:
- English
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