Low-temperature growth of high quality In{sub x}Ga{sub 1{minus}x}N by atomic layer epitaxy

Book · Fri Nov 01 04:00:00 EST 1996

OSTI ID:394954

Boutros, K S; Roberts, J C; McIntosh, F G; Piner, E L; El-Masry, N A; Bedair, S M ^[1]

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1. North Carolina State Univ., Raleigh, NC (United States)

The authors report on the low temperature epitaxial growth of In{sub x}Ga{sub 1{minus}x}N with 0 {le} x {le} 0.27 by Atomic Layer Epitaxy (ALE). GaN and InGaN single crystal films have been grown by ALE in the temperature range between 600 and 700 C using the rotating substrate approach. Films were deposited on sapphire substrates using TMG, EdMIn, and NH{sub 3} as precursors. Up to 27% indium content has been achieved in the InGaN films. The FWHM of the (0002) InGaN peak by double crystal X-ray diffraction of these films was a small as 5 minutes. Room-temperature photoluminescence (PL) from these films was dominated by band edge emission between 365 nm and 446 nm. AlGaN/InGaN double heterostructures were grown in a hybrid reactor, in which the AlGaN barrier layers were grown by MOCVD and the InGaN active layer by ALE. The structures showed good crystal quality, and sharp PL emission with peak intensity at 410 nm.

• OSTI ID: 394954
• Report Number(s): CONF-951155--; ISBN 1-55899-298-7
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
42 ENGINEERING
AMMONIA
COMPOSITE MATERIALS
CRYSTAL STRUCTURE
ELECTRONIC EQUIPMENT
EXPERIMENTAL DATA
GALLIUM NITRIDES
INDIUM NITRIDES
MONOCRYSTALS
NITROGEN
OPTICAL PROPERTIES
ORGANOMETALLIC COMPOUNDS
PHOTOLUMINESCENCE
SAPPHIRE
SEMICONDUCTOR MATERIALS
SURFACE COATING
X-RAY DIFFRACTION