Calculation of the electron spin relaxation times in InSb and InAs by the projection-reduction method

Journal Article · Sun Dec 07 00:00:00 EST 2014 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4903062· OSTI ID:22402724

Kang, Nam Lyong, E-mail: [e-mail] ^[1]

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1. Department of Nanomechatronics Engineering, Pusan National University, Miryang 627-706 (Korea, Republic of)

The electron spin relaxation times in a system of electrons interacting with piezoelectric phonons mediated through spin-orbit interactions were calculated using the formula derived from the projection-reduction method. The results showed that the temperature and magnetic field dependence of the relaxation times in InSb and InAs were similar. The piezoelectric material constants obtained by a comparison with the reported experimental result were P{sub pe}=4.0×10{sup 22} eV/m for InSb and P{sub pe}=1.2×10{sup 23} eV/m for InAs. The result also showed that the relaxation of the electron spin by the Elliot-Yafet process is more relevant for InSb than InAs at a low density.

• OSTI ID: 22402724
• Journal Information: Journal of Applied Physics, Vol. 116, Issue 21; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
INDIUM ANTIMONIDES
INDIUM ARSENIDES
L-S COUPLING
MAGNETIC FIELDS
PHONONS
PIEZOELECTRICITY
RELAXATION
SPIN