Energy relaxation of light holes in InAs/sub. 15/Sb/sub. 85//InSb multiple quantum wells

Conference · Sun Jan 01 00:00:00 EST 1989

OSTI ID:5724072

Tigges, C P; Schirber, J E; Hjalmarson, H P; Fritz, I J; Dawson, L R

The energy relaxation rate of light in-plane in InAs/sub .15/Sb/sub .85//InSb quantum wells has been measured using a Shubnikov-de Haas technique. In this Type II system, the holes reside in the InSb layers; strain reverses the heavy-light hole ordering and thus light holes are the charge carriers. The samples consist of 20 to 100 InAs/sub .15/Sb/sub .85//InSb periods 100/angstrom//200/angstrom/ thick. The InAsSb barriers are doped with Be. The total carrier concentration is obtained from Hall data. Shubnikov-de Haas oscillation amplitudes are measured and used to determine the light hole temperature for a given applied power. The steady state power per carrier is equated to the energy relaxation rate to determine the carrier temperature T/sub H/. Data are compared with theory and experiment for light holes in InGaAs/GaAs quantum wells. 17 refs., 5 figs.

• Research Organization: Sandia National Labs., Albuquerque, NM (USA)
• DOE Contract Number: AC04-76DP00789
• OSTI ID: 5724072
• Report Number(s): SAND-89-1875C; CONF-8907133-1; ON: DE89016035
• Resource Relation: Conference: 6. international conference on hot carriers in semiconductors, Scottsdale, AZ, USA, 23-28 Jul 1989; Other Information: Portions of this document are illegible in microfiche products
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
37 INORGANIC
ORGANIC
PHYSICAL AND ANALYTICAL CHEMISTRY
ANTIMONY COMPOUNDS
RELAXATION
ARSENIC COMPOUNDS
INDIUM ANTIMONIDES
CHARGE CARRIERS
HOLES
LAYERS
SHUBNIKOV-DE HAAS EFFECT
ANTIMONIDES
INDIUM COMPOUNDS
656002* - Condensed Matter Physics- General Techniques in Condensed Matter- (1987-)
400201 - Chemical & Physicochemical Properties