Energy relaxation of light holes in InAs/sub. 15/Sb/sub. 85//InSb multiple quantum wells

Conference · Sun Jan 01 04:00:00 EST 1989

OSTI ID:5724072

Tigges, C P; Schirber, J E; Hjalmarson, H P; Fritz, I J; Dawson, L R

The energy relaxation rate of light in-plane in InAs/sub .15/Sb/sub .85//InSb quantum wells has been measured using a Shubnikov-de Haas technique. In this Type II system, the holes reside in the InSb layers; strain reverses the heavy-light hole ordering and thus light holes are the charge carriers. The samples consist of 20 to 100 InAs/sub .15/Sb/sub .85//InSb periods 100/angstrom//200/angstrom/ thick. The InAsSb barriers are doped with Be. The total carrier concentration is obtained from Hall data. Shubnikov-de Haas oscillation amplitudes are measured and used to determine the light hole temperature for a given applied power. The steady state power per carrier is equated to the energy relaxation rate to determine the carrier temperature T/sub H/. Data are compared with theory and experiment for light holes in InGaAs/GaAs quantum wells. 17 refs., 5 figs.

• Research Organization: Sandia National Labs., Albuquerque, NM (USA)
• DOE Contract Number: AC04-76DP00789
• OSTI ID: 5724072
• Report Number(s): SAND-89-1875C; CONF-8907133-1; ON: DE89016035
• Country of Publication: United States
• Language: English

Related Subjects

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY
400201 -- Chemical & Physicochemical Properties
656002* -- Condensed Matter Physics-- General Techniques in Condensed Matter-- (1987-)
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ANTIMONIDES
ANTIMONY COMPOUNDS
ARSENIC COMPOUNDS
CHARGE CARRIERS
HOLES
INDIUM ANTIMONIDES
INDIUM COMPOUNDS
LAYERS
RELAXATION
SHUBNIKOV-DE HAAS EFFECT