Effective masses and g factors for 2-D light holes in InSb
The light holes in InSb are characterized using a Shubnikov-de Haas technique by exploiting the Type II band offset of an InAs/sub .15/Sb/sub .85//InSb strained layer superlattice. The data are analyzed to determine the effective masses and g factors as a function of carrier concentration. 10 refs., 2 figs., 1 tab.
- Research Organization:
- Sandia National Labs., Albuquerque, NM (USA)
- DOE Contract Number:
- AC04-76DP00789
- OSTI ID:
- 5975319
- Report Number(s):
- SAND-89-0324C; CONF-890621-1; ON: DE89014899
- Country of Publication:
- United States
- Language:
- English
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