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Effective masses and g factors for 2-D light holes in InSb

Conference ·
The light holes in InSb are characterized using a Shubnikov-de Haas technique by exploiting the Type II band offset of an InAs/sub .15/Sb/sub .85//InSb strained layer superlattice. The data are analyzed to determine the effective masses and g factors as a function of carrier concentration. 10 refs., 2 figs., 1 tab.
Research Organization:
Sandia National Labs., Albuquerque, NM (USA)
DOE Contract Number:
AC04-76DP00789
OSTI ID:
5975319
Report Number(s):
SAND-89-0324C; CONF-890621-1; ON: DE89014899
Country of Publication:
United States
Language:
English