Mapping of axial strain in InAs/InSb heterostructured nanowires

Journal Article · Mon Aug 31 00:00:00 EDT 2015 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4929979· OSTI ID:22489207

Patra, Atanu; Panda, Jaya Kumar; Roy, Anushree ^[1]; Gemmi, Mauro; David, Jérémy ^[2]; Ercolani, Daniele; Sorba, Lucia ^[3]

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1. Department of Physics, Indian Institute of Technology Kharagpur, Kharagpur 721 302 (India)
2. Center for Nanotechnology Innovation @ NEST, Istituto Italiano di Tecnologia, Piazza S. Silvestro 12, I-56127 Pisa (Italy)
3. NEST-Istituto Nanoscienze-CNR and Scuola Normale Superiore, Piazza S. Silvestro 12, I-56127 Pisa (Italy)

The article presents a mapping of the residual strain along the axis of InAs/InSb heterostructured nanowires. Using confocal Raman measurements, we observe a gradual shift in the transverse optical phonon mode along the axis of these nanowires. We attribute the observed shift to a residual strain arising from the InAs/InSb lattice mismatch. We find that the strain is maximum at the interface and then monotonically relaxes towards the tip of the nanowires. We also analyze the crystal structure of the InSb segment through selected area electron diffraction measurements and electron diffraction tomography on individual nanowires.

• OSTI ID: 22489207
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 9 Vol. 107; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
CRYSTAL DEFECTS
ELECTRON DIFFRACTION
INDIUM ANTIMONIDES
INDIUM ARSENIDES
INTERFACES
MAPPING
NANOWIRES
PHONONS
STRAINS
TOMOGRAPHY