Influence of electrically induced refraction and absorption on the measurement of spin current by pockels effect in GaAs
Journal Article
·
· Journal of Applied Physics
- State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510275 (China)
The pockels effect could be utilized to measure spin current in semiconductors for linear electro-optic coefficient can be induced by spin current. When dc electric field is applied, the carriers will shift in k space, which could lead to the change of refraction and absorption coefficients. In this paper, we investigate the influence of the induced change of the refraction and absorption coefficients on the measurement of spin current by pockels effect in GaAs.
- OSTI ID:
- 22399278
- Journal Information:
- Journal of Applied Physics, Vol. 117, Issue 10; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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