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Title: Influence of electrically induced refraction and absorption on the measurement of spin current by pockels effect in GaAs

The pockels effect could be utilized to measure spin current in semiconductors for linear electro-optic coefficient can be induced by spin current. When dc electric field is applied, the carriers will shift in k space, which could lead to the change of refraction and absorption coefficients. In this paper, we investigate the influence of the induced change of the refraction and absorption coefficients on the measurement of spin current by pockels effect in GaAs.
Authors:
;  [1]
  1. State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510275 (China)
Publication Date:
OSTI Identifier:
22399278
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 117; Journal Issue: 10; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ABSORPTION; CHARGE CARRIERS; CURRENTS; ELECTRIC FIELDS; ELECTRO-OPTICAL EFFECTS; GALLIUM ARSENIDES; REFRACTION; SEMICONDUCTOR MATERIALS; SPIN