Current-induced spin polarization in InGaAs and GaAs epilayers with varying doping densities
- Univ. of Michigan, Ann Arbor, MI (United States)
- Univ. Rome Tre, Rome (Italy)
Here, the current-induced spin polarization and momentum-dependent spin-orbit field were measured in InxGa1-xAs epilayers with varying indium concentrations and silicon doping densities. Samples with higher indium concentrations and carrier concentrations and lower mobilities were found to have larger electrical spin generation efficiencies. Furthermore, current-induced spin polarization was detected in GaAs epilayers despite the absence of measurable spin-orbit fields, indicating that the extrinsic contributions to the spin-polarization mechanism must be considered. Theoretical calculations based on a model that includes extrinsic contributions to the spin dephasing and the spin Hall effect, in addition to the intrinsic Rashba and Dresselhaus spin-orbit coupling, are found to reproduce the experimental finding that the crystal direction with the smaller net spin-orbit field has larger electrical spin generation efficiency and are used to predict how sample parameters affect the magnitude of the current-induced spin polarization.
- Research Organization:
- Univ. of Michigan, Ann Arbor, MI (United States)
- Sponsoring Organization:
- USDOE Office of Science (SC), Basic Energy Sciences (BES)
- Grant/Contract Number:
- SC0016206
- OSTI ID:
- 1409026
- Alternate ID(s):
- OSTI ID: 1409128
- Journal Information:
- Physical Review B, Vol. 96, Issue 19; Related Information: https://journals.aps.org/prb/supplemental/10.1103/PhysRevB.96.195206/Luengo_Supplement.pdf; ISSN 2469-9950
- Publisher:
- American Physical Society (APS)Copyright Statement
- Country of Publication:
- United States
- Language:
- English
Web of Science
Current-Induced Spin Polarization in Nonmagnetic Semiconductors
|
journal | November 2018 |
Nonlocal magnetolectric effects in diffusive conductors with spatially inhomogeneous spin-orbit coupling
|
journal | November 2019 |
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