Current-induced spin polarization in InGaAs and GaAs epilayers with varying doping densities

Luengo-Kovac, Marta; Huang, Simon; Del Gaudio, Davide; Occena, Jordan; Goldman, Rachel S.; Raimondi, Roberto; Sih, Vanessa

doi:10.1103/PhysRevB.96.195206

Current-induced spin polarization in InGaAs and GaAs epilayers with varying doping densities

Journal Article · Thu Nov 16 00:00:00 EST 2017 · Physical Review B

DOI:https://doi.org/10.1103/PhysRevB.96.195206· OSTI ID:1409026

Luengo-Kovac, Marta ^[1]; Huang, Simon ^[2]; Del Gaudio, Davide ^[2]; Occena, Jordan ^[2]; Goldman, Rachel S. ^[2]; Raimondi, Roberto ^[3]; Sih, Vanessa ^[2]

Univ. of Michigan, Ann Arbor, MI (United States); University of Michigan, Ann Arbor
Univ. of Michigan, Ann Arbor, MI (United States)
Univ. Rome Tre, Rome (Italy)

Here, the current-induced spin polarization and momentum-dependent spin-orbit field were measured in In_xGa_1-xAs epilayers with varying indium concentrations and silicon doping densities. Samples with higher indium concentrations and carrier concentrations and lower mobilities were found to have larger electrical spin generation efficiencies. Furthermore, current-induced spin polarization was detected in GaAs epilayers despite the absence of measurable spin-orbit fields, indicating that the extrinsic contributions to the spin-polarization mechanism must be considered. Theoretical calculations based on a model that includes extrinsic contributions to the spin dephasing and the spin Hall effect, in addition to the intrinsic Rashba and Dresselhaus spin-orbit coupling, are found to reproduce the experimental finding that the crystal direction with the smaller net spin-orbit field has larger electrical spin generation efficiency and are used to predict how sample parameters affect the magnitude of the current-induced spin polarization.

View Accepted Manuscript (DOE)

Research Organization:: Univ. of Michigan, Ann Arbor, MI (United States)

Sponsoring Organization:: USDOE; USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)

Grant/Contract Number:: SC0016206

OSTI ID:: 1409026

Alternate ID(s):: OSTI ID: 1409128

Journal Information:: Physical Review B, Journal Name: Physical Review B Journal Issue: 19 Vol. 96; ISSN 2469-9950; ISSN PRBMDO

Publisher:: American Physical Society (APS)Copyright Statement

Country of Publication:: United States

Language:: English

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Cited By (2)

Current-Induced Spin Polarization in Nonmagnetic Semiconductors Qi, Yunong; Flatté, Michael E. Journal of Superconductivity and Novel Magnetism, Vol. 32, Issue 1 https://doi.org/10.1007/s10948-018-4918-y	journal	November 2018
Nonlocal magnetolectric effects in diffusive conductors with spatially inhomogeneous spin-orbit coupling Sanz-Fernández, Cristina; Borge, Juan; Tokatly, Ilya V. Physical Review B, Vol. 100, Issue 19 https://doi.org/10.1103/physrevb.100.195406	journal	November 2019

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