A silicon metal-oxide-semiconductor electron spin-orbit qubit

Jock, Ryan Michael; Jacobson, Noah Tobias; Harvey-Collard, Patrick; Mounce, Andrew M.; Srinivasa, Vanita; Ward, Daniel Robert; Anderson, John; Manginell, Ron; Wendt, Joel R.; Rudolph, Martin; Pluym, Tammy; Gamble, John King; Baczewski, Andrew David; Witzel, Wayne M.; Carroll, Malcolm S.

doi:10.1038/s41467-018-04200-0

A silicon metal-oxide-semiconductor electron spin-orbit qubit

Journal Article · Wed May 02 00:00:00 EDT 2018 · Nature Communications

DOI:https://doi.org/10.1038/s41467-018-04200-0· OSTI ID:1452895

^[1]; Jacobson, Noah Tobias ^[1]; Harvey-Collard, Patrick ^[2]; Mounce, Andrew M. ^[1]; Srinivasa, Vanita ^[1]; Ward, Daniel Robert ^[1]; Anderson, John ^[1]; Manginell, Ron ^[1]; Wendt, Joel R. ^[1]; Rudolph, Martin ^[1]; Pluym, Tammy ^[1]; Gamble, John King ^[1]; Baczewski, Andrew David ^[1]; Witzel, Wayne M. ^[1]; Carroll, Malcolm S. ^[1]

Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Univ. de Sherbrooke, Sherbrooke, QC (Canada)

Here, the silicon metal-oxide-semiconductor (MOS) material system is a technologically important implementation of spin-based quantum information processing. However, the MOS interface is imperfect leading to concerns about 1/f trap noise and variability in the electron g-factor due to spin–orbit (SO) effects. Here we advantageously use interface–SO coupling for a critical control axis in a double-quantum-dot singlet–triplet qubit. The magnetic field-orientation dependence of the g-factors is consistent with Rashba and Dresselhaus interface–SO contributions. The resulting all-electrical, two-axis control is also used to probe the MOS interface noise. The measured inhomogeneous dephasing time, T*_2m, of 1.6 μs is consistent with 99.95% ²⁸Si enrichment. Furthermore, when tuned to be sensitive to exchange fluctuations, a quasi-static charge noise detuning variance of 2 μeV is observed, competitive with low-noise reports in other semiconductor qubits. This work, therefore, demonstrates that the MOS interface inherently provides properties for two-axis qubit control, while not increasing noise relative to other material choices.

View Accepted Manuscript (DOE)

Research Organization:: Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)

Sponsoring Organization:: WFO; USDOE

Grant/Contract Number:: AC04-94AL85000

OSTI ID:: 1452895

Alternate ID(s):: OSTI ID: 1457181

Report Number(s):: SAND--2018-2432J; 661217

Journal Information:: Nature Communications, Journal Name: Nature Communications Journal Issue: 1 Vol. 9; ISSN 2041-1723

Publisher:: Nature Publishing GroupCopyright Statement

Country of Publication:: United States

Language:: English

References (79)

A CMOS silicon spin qubit Maurand, R.; Jehl, X.; Kotekar-Patil, D. Nature Communications, Vol. 7, Issue 1 https://doi.org/10.1038/ncomms13575	journal	November 2016
Spin-valley lifetimes in a silicon quantum dot with tunable valley splitting Yang, C. H.; Rossi, A.; Ruskov, R. Nature Communications, Vol. 4, Issue 1 https://doi.org/10.1038/ncomms3069	journal	June 2013
High-fidelity entangling gate for double-quantum-dot spin qubits Nichol, John M.; Orona, Lucas A.; Harvey, Shannon P. npj Quantum Information, Vol. 3, Issue 1 https://doi.org/10.1038/s41534-016-0003-1	journal	January 2017
Charge noise, spin-orbit coupling, and dephasing of single-spin qubits Bermeister, Adam; Keith, Daniel; Culcer, Dimitrie Applied Physics Letters, Vol. 105, Issue 19 https://doi.org/10.1063/1.4901162	journal	November 2014
Valley splitting of single-electron Si MOS quantum dots Gamble, John King; Harvey-Collard, Patrick; Jacobson, N. Tobias Applied Physics Letters, Vol. 109, Issue 25 https://doi.org/10.1063/1.4972514	journal	December 2016
Spin–orbit splittings in Si/SiGe quantum wells: from ideal Si membranes to realistic heterostructures Prada, M.; Klimeck, G.; Joynt, R. New Journal of Physics, Vol. 13, Issue 1 https://doi.org/10.1088/1367-2630/13/1/013009	journal	January 2011
Electric field effect on electron spin splitting in Si Ge ∕ Si quantum wells Nestoklon, M. O.; Ivchenko, E. L.; Jancu, J. -M. Physical Review B, Vol. 77, Issue 15 https://doi.org/10.1103/physrevb.77.155328	journal	April 2008
Electrically driven spin qubit based on valley mixing Huang, Wister; Veldhorst, Menno; Zimmerman, Neil M. Physical Review B, Vol. 95, Issue 7 https://doi.org/10.1103/physrevb.95.075403	journal	February 2017
Effective one-band approach for the spin splittings in quantum wells Alekseev, P. S.; Nestoklon, M. O. Physical Review B, Vol. 95, Issue 12 https://doi.org/10.1103/physrevb.95.125303	journal	March 2017
Charge Noise Spectroscopy Using Coherent Exchange Oscillations in a Singlet-Triplet Qubit Dial, O. E.; Shulman, M. D.; Harvey, S. P. Physical Review Letters, Vol. 110, Issue 14 https://doi.org/10.1103/physrevlett.110.146804	journal	April 2013
Isotopically enhanced triple-quantum-dot qubit Eng, Kevin; Ladd, Thaddeus D.; Smith, Aaron Science Advances, Vol. 1, Issue 4 https://doi.org/10.1126/sciadv.1500214	journal	May 2015
Quantum Coherence in a One-Electron Semiconductor Charge Qubit Petersson, K. D.; Petta, J. R.; Lu, H. arXiv https://doi.org/10.48550/arxiv.1008.3089	text	January 2010
Pauli spin blockade in undoped Si/SiGe two-electron double quantum dots Borselli, Matthew G.; Eng, Kevin; Croke, Edward T. arXiv https://doi.org/10.48550/arxiv.1106.6285	text	January 2011
Two-axis control of a singlet-triplet qubit with an integrated micromagnet Wu, Xian; Ward, D. R.; Prance, J. R. arXiv https://doi.org/10.48550/arxiv.1403.0019	text	January 2014
An addressable quantum dot qubit with fault-tolerant control fidelity Veldhorst, M.; Hwang, J. C. C.; Yang, C. H. arXiv https://doi.org/10.48550/arxiv.1407.1950	text	January 2014
A Two Qubit Logic Gate in Silicon Veldhorst, M.; Yang, C. H.; Hwang, J. C. C. arXiv https://doi.org/10.48550/arxiv.1411.5760	text	January 2014
Spin-orbit coupling and operation of multi-valley spin qubits Veldhorst, M.; Ruskov, R.; Yang, C. H. arXiv https://doi.org/10.48550/arxiv.1505.01213	text	January 2015
A fault-tolerant addressable spin qubit in a natural silicon quantum dot Takeda, K.; Kamioka, J.; Otsuka, T. arXiv https://doi.org/10.48550/arxiv.1602.07833	text	January 2016
Extending the coherence of a quantum dot hybrid qubit Thorgrimsson, Brandur; Kim, Dohun; Yang, Yuan-Chi arXiv https://doi.org/10.48550/arxiv.1611.04945	text	January 2016
High Resolution Valley Spectroscopy of Si Quantum Dots Mi, X.; Peterfalvi, Csaba G.; Burkard, Guido arXiv https://doi.org/10.48550/arxiv.1704.06312	text	January 2017
Spin and valley-orbit splittings in SiGe/Si heterostructures Nestoklon, M. O.; Golub, L. E.; Ivchenko, E. L. arXiv https://doi.org/10.48550/arxiv.cond-mat/0601520	text	January 2006
Microscopic interface asymmetry and spin splitting of electron subbands in semiconductor quantum structures Rössler, Ulrich; Kainz, Josef Universität Regensburg https://doi.org/10.5283/epub.1346	text	January 2002
Quadrupolar and anisotropy effects on dephasing in two-electron spin qubits in GaAs Botzem, Tim; McNeil, Robert P. G.; Mol, Jan-Michael Universität Regensburg https://doi.org/10.5283/epub.33726	text	January 2016
Microscopic interface asymmetry and spin-splitting of electron subbands in semiconductor quantum structures Rössler, U.; Kainz, J. Solid State Communications, Vol. 121, Issue 6-7 https://doi.org/10.1016/S0038-1098(02)00023-6	journal	February 2002
A two-qubit logic gate in silicon Veldhorst, M.; Yang, C. H.; Hwang, J. C. C. Nature, Vol. 526, Issue 7573, p. 410-414 https://doi.org/10.1038/nature15263	journal	October 2015
Emergent phenomena induced by spin–orbit coupling at surfaces and interfaces Soumyanarayanan, Anjan; Reyren, Nicolas; Fert, Albert Nature, Vol. 539, Issue 7630 https://doi.org/10.1038/nature19820	journal	November 2016
Quadrupolar and anisotropy effects on dephasing in two-electron spin qubits in GaAs Botzem, Tim; McNeil, Robert P. G.; Mol, Jan-Michael Nature Communications, Vol. 7, Issue 1 https://doi.org/10.1038/ncomms11170	journal	April 2016
Electron spin coherence exceeding seconds in high-purity silicon Tyryshkin, Alexei M.; Tojo, Shinichi; Morton, John J. L. Nature Materials, Vol. 11, Issue 2 https://doi.org/10.1038/nmat3182	journal	December 2011
New perspectives for Rashba spin–orbit coupling Manchon, A.; Koo, H. C.; Nitta, J. Nature Materials, Vol. 14, Issue 9 https://doi.org/10.1038/nmat4360	journal	August 2015
Electrical control of a long-lived spin qubit in a Si/SiGe quantum dot Kawakami, E.; Scarlino, P.; Ward, D. R. Nature Nanotechnology, Vol. 9, Issue 9 https://doi.org/10.1038/nnano.2014.153	journal	August 2014
An addressable quantum dot qubit with fault-tolerant control-fidelity Veldhorst, M.; Hwang, J. C. C.; Yang, C. H. Nature Nanotechnology, Vol. 9, Issue 12 https://doi.org/10.1038/nnano.2014.216	journal	October 2014
Universal quantum control of two-electron spin quantum bits using dynamic nuclear polarization Foletti, Sandra; Bluhm, Hendrik; Mahalu, Diana Nature Physics, Vol. 5, Issue 12 https://doi.org/10.1038/nphys1424	journal	October 2009
Coherent manipulation of valley states at multiple charge configurations of a silicon quantum dot device Schoenfield, Joshua S.; Freeman, Blake M.; Jiang, HongWen Nature Communications, Vol. 8, Issue 1 https://doi.org/10.1038/s41467-017-00073-x	journal	July 2017
Coherent coupling between a quantum dot and a donor in silicon Harvey-Collard, Patrick; Jacobson, N. Tobias; Rudolph, Martin Nature Communications, Vol. 8, Issue 1 https://doi.org/10.1038/s41467-017-01113-2	journal	October 2017
Coherent shuttle of electron-spin states Fujita, Takafumi; Baart, Timothy Alexander; Reichl, Christian npj Quantum Information, Vol. 3, Issue 1 https://doi.org/10.1038/s41534-017-0024-4	journal	June 2017
Extending the coherence of a quantum dot hybrid qubit Thorgrimsson, Brandur; Kim, Dohun; Yang, Yuan-Chi npj Quantum Information, Vol. 3, Issue 1 https://doi.org/10.1038/s41534-017-0034-2	journal	August 2017
Pauli spin blockade in undoped Si/SiGe two-electron double quantum dots Borselli, M. G.; Eng, K.; Croke, E. T. Applied Physics Letters, Vol. 99, Issue 6 https://doi.org/10.1063/1.3623479	journal	August 2011
Dephasing of Si singlet-triplet qubits due to charge and spin defects Culcer, Dimitrie; Zimmerman, Neil M. Applied Physics Letters, Vol. 102, Issue 23 https://doi.org/10.1063/1.4810911	journal	June 2013
A reconfigurable gate architecture for Si/SiGe quantum dots Zajac, D. M.; Hazard, T. M.; Mi, X. Applied Physics Letters, Vol. 106, Issue 22 https://doi.org/10.1063/1.4922249	journal	June 2015
Two-axis control of a singlet-triplet qubit with an integrated micromagnet Wu, X.; Ward, D. R.; Prance, J. R. Proceedings of the National Academy of Sciences, Vol. 111, Issue 33 https://doi.org/10.1073/pnas.1412230111	journal	August 2014
Spin splitting in symmetrical SiGe quantum wells Golub, L. E.; Ivchenko, E. L. Physical Review B, Vol. 69, Issue 11 https://doi.org/10.1103/PhysRevB.69.115333	journal	March 2004
Spin and valley-orbit splittings in Si Ge ∕ Si heterostructures Nestoklon, M. O.; Golub, L. E.; Ivchenko, E. L. Physical Review B, Vol. 73, Issue 23 https://doi.org/10.1103/PhysRevB.73.235334	journal	June 2006
Electric field effect on electron spin splitting in Si Ge ∕ Si quantum wells Nestoklon, M. O.; Ivchenko, E. L.; Jancu, J. -M. Physical Review B, Vol. 77, Issue 15 https://doi.org/10.1103/PhysRevB.77.155328	journal	April 2008
Hyperfine interactions in silicon quantum dots Assali, Lucy V. C.; Petrilli, Helena M.; Capaz, Rodrigo B. Physical Review B, Vol. 83, Issue 16 https://doi.org/10.1103/PhysRevB.83.165301	journal	April 2011
Nuclear spin induced decoherence of a quantum dot in Si confined at a SiGe interface: Decoherence dependence on 73 Ge Witzel, Wayne M.; Rahman, Rajib; Carroll, Malcolm S. Physical Review B, Vol. 85, Issue 20 https://doi.org/10.1103/PhysRevB.85.205312	journal	May 2012
Quantum decoherence of the central spin in a sparse system of dipolar coupled spins Witzel, Wayne M.; Carroll, Malcolm S.; Cywiński, Łukasz Physical Review B, Vol. 86, Issue 3 https://doi.org/10.1103/PhysRevB.86.035452	journal	July 2012
Coherent quantum oscillations and echo measurements of a Si charge qubit Shi, Zhan; Simmons, C. B.; Ward, Daniel R. Physical Review B, Vol. 88, Issue 7 https://doi.org/10.1103/PhysRevB.88.075416	journal	August 2013
Relaxation of excited spin, orbital, and valley qubit states in ideal silicon quantum dots Tahan, Charles; Joynt, Robert Physical Review B, Vol. 89, Issue 7 https://doi.org/10.1103/PhysRevB.89.075302	journal	February 2014
Spin-orbit coupling and operation of multivalley spin qubits Veldhorst, M.; Ruskov, R.; Yang, C. H. Physical Review B, Vol. 92, Issue 20 https://doi.org/10.1103/PhysRevB.92.201401	journal	November 2015
Electrically driven spin qubit based on valley mixing Huang, Wister; Veldhorst, Menno; Zimmerman, Neil M. Physical Review B, Vol. 95, Issue 7 https://doi.org/10.1103/PhysRevB.95.075403	journal	February 2017
Effective one-band approach for the spin splittings in quantum wells Alekseev, P. S.; Nestoklon, M. O. Physical Review B, Vol. 95, Issue 12 https://doi.org/10.1103/PhysRevB.95.125303	journal	March 2017
Impact of g -factors and valleys on spin qubits in a silicon double quantum dot Hwang, J. C. C.; Yang, C. H.; Veldhorst, M. Physical Review B, Vol. 96, Issue 4 https://doi.org/10.1103/PhysRevB.96.045302	journal	July 2017
Electron g -factor of valley states in realistic silicon quantum dots Ruskov, Rusko; Veldhorst, Menno; Dzurak, Andrew S. Physical Review B, Vol. 98, Issue 24 https://doi.org/10.1103/PhysRevB.98.245424	journal	December 2018
Quantum Coherence in a One-Electron Semiconductor Charge Qubit Petersson, K. D.; Petta, J. R.; Lu, H. Physical Review Letters, Vol. 105, Issue 24 https://doi.org/10.1103/PhysRevLett.105.246804	journal	December 2010
Charge Noise Spectroscopy Using Coherent Exchange Oscillations in a Singlet-Triplet Qubit Dial, O. E.; Shulman, M. D.; Harvey, S. P. Physical Review Letters, Vol. 110, Issue 14 https://doi.org/10.1103/PhysRevLett.110.146804	journal	April 2013
High-Resolution Valley Spectroscopy of Si Quantum Dots Mi, X.; Péterfalvi, Csaba G.; Burkard, Guido Physical Review Letters, Vol. 119, Issue 17 https://doi.org/10.1103/PhysRevLett.119.176803	journal	October 2017
Discrete Resistance Switching in Submicrometer Silicon Inversion Layers: Individual Interface Traps and Low-Frequency ( 1 f ?) Noise Ralls, K. S.; Skocpol, W. J.; Jackel, L. D. Physical Review Letters, Vol. 52, Issue 3 https://doi.org/10.1103/PhysRevLett.52.228	journal	January 1984
Decoherence-Free Subspaces for Quantum Computation Lidar, D. A.; Chuang, I. L.; Whaley, K. B. Physical Review Letters, Vol. 81, Issue 12 https://doi.org/10.1103/PhysRevLett.81.2594	journal	September 1998
High-Fidelity Single-Shot Readout for a Spin Qubit via an Enhanced Latching Mechanism Harvey-Collard, Patrick; D’Anjou, Benjamin; Rudolph, Martin Physical Review X, Vol. 8, Issue 2 https://doi.org/10.1103/PhysRevX.8.021046	journal	May 2018
Electron g -factor of valley states in realistic silicon quantum dots Ruskov, Rusko; Veldhorst, Menno; Dzurak, Andrew S. Physical Review B, Vol. 98, Issue 24 https://doi.org/10.1103/physrevb.98.245424	journal	December 2018
Coupling MOS quantum dot and phosphorous donor qubit systems Rudolph, M.; Harvey-Collard, P.; Jock, R. 2016 IEEE International Electron Devices Meeting (IEDM) https://doi.org/10.1109/IEDM.2016.7838537	conference	December 2016
Coupling MOS quantum dot and phosphorous donor qubit systems Rudolph, M.; Harvey-Collard, P.; Jock, R. 2016 IEEE International Electron Devices Meeting (IEDM) https://doi.org/10.1109/iedm.2016.7838537	conference	December 2016
A fault-tolerant addressable spin qubit in a natural silicon quantum dot Takeda, Kenta; Kamioka, Jun; Otsuka, Tomohiro Science Advances, Vol. 2, Issue 8 https://doi.org/10.1126/sciadv.1600694	journal	August 2016
Coherent Manipulation of Coupled Electron Spins in Semiconductor Quantum Dots Petta, J. R. Science, Vol. 309, Issue 5744 https://doi.org/10.1126/science.1116955	journal	September 2005
Valley splitting of single-electron Si MOS quantum dots Gamble, Jk; Harvey-Collard, P.; Jacobson, Nt Apollo - University of Cambridge Repository https://doi.org/10.17863/cam.9014	text	January 2016
Quadrupolar and anisotropy effects on dephasing in two-electron spin qubits in GaAs Botzem, Tim; McNeil, Robert P. G.; Mol, Jan-Michael RWTH Aachen University https://doi.org/10.18154/rwth-2016-03551	text	January 2016
Coherent shuttle of electron-spin states Fujita, Takafumi; Baart, Timothy A.; Reichl, Christian ETH Zurich https://doi.org/10.3929/ethz-b-000190635	text	January 2017
Hyperfine interactions in silicon quantum dots Assali, Lucy V. C.; Petrilli, Helena M.; Capaz, Rodrigo B. arXiv https://doi.org/10.48550/arxiv.1007.1000	text	January 2010
Universal quantum control of two-electron spin quantum bits using dynamic nuclear polarization Foletti, Sandra; Bluhm, Hendrik; Mahalu, Diana arXiv https://doi.org/10.48550/arxiv.1009.5343	text	January 2010
Quantum Decoherence of the Central Spin in a Sparse System of Dipolar Coupled Spins Witzel, Wayne M.; Carroll, Malcolm S.; Cywinski, Lukasz arXiv https://doi.org/10.48550/arxiv.1204.2834	text	January 2012
A Reconfigurable Gate Architecture for Si/SiGe Quantum Dots Zajac, D. M.; Hazard, T. M.; Mi, X. arXiv https://doi.org/10.48550/arxiv.1502.01624	text	January 2015
New Perspectives for Rashba Spin-Orbit Coupling Manchon, A.; Koo, H. C.; Nitta, J. arXiv https://doi.org/10.48550/arxiv.1507.02408	text	January 2015
Coherent coupling between a quantum dot and a donor in silicon Harvey-Collard, Patrick; Jacobson, N. Tobias; Rudolph, Martin arXiv https://doi.org/10.48550/arxiv.1512.01606	text	January 2015
A CMOS silicon spin qubit Maurand, R.; Jehl, X.; Patil, D. Kotekar arXiv https://doi.org/10.48550/arxiv.1605.07599	text	January 2016
Effective one-band approach for the spin splittings in quantum wells Alekseev, P. S.; Nestoklon, M. O. arXiv https://doi.org/10.48550/arxiv.1607.07733	text	January 2016
High-fidelity entangling gate for double-quantum-dot spin qubits Nichol, John M.; Orona, Lucas A.; Harvey, Shannon P. arXiv https://doi.org/10.48550/arxiv.1608.04258	preprint	January 2016
Coupling MOS Quantum Dot and Phosphorus Donor Qubit Systems Rudolph, M.; Harvey-Collard, P.; Jock, R. arXiv https://doi.org/10.48550/arxiv.1705.05887	text	January 2017
Spin Splitting in Symmetrical SiGe Quantum Wells Golub, L. E.; Ivchenko, E. L. arXiv https://doi.org/10.48550/arxiv.cond-mat/0310200	text	January 2003
Decoherence Free Subspaces for Quantum Computation Lidar, D. A.; Chuang, I. L.; Whaley, K. B. arXiv https://doi.org/10.48550/arxiv.quant-ph/9807004	text	January 1998

Cited By (31)

Spin-photon module for scalable network architecture in quantum dots Zhu, Xing-Yu; Tu, Tao; Guo, Ao-Lin Scientific Reports, Vol. 10, Issue 1 https://doi.org/10.1038/s41598-020-61976-2	journal	March 2020
g -factor of electrons in gate-defined quantum dots in a strong in-plane magnetic field Stano, Peter; Hsu, Chen-Hsuan; Serina, Marcel Physical Review B, Vol. 98, Issue 19 https://doi.org/10.1103/physrevb.98.195314	journal	November 2018
A crossbar network for silicon quantum dot qubits Li, Ruoyu; Petit, Luca; Franke, David P. Science Advances, Vol. 4, Issue 7 https://doi.org/10.1126/sciadv.aar3960	journal	July 2018
Electric-field control and noise protection of the flopping-mode spin qubit Benito, Monica; Croot, Xanthe; Adelsberger, Christoph arXiv https://doi.org/10.48550/arxiv.1904.13117	text	January 2019
Assessing the potential of Ge/SiGe quantum dots as hosts for singlet-triplet qubits Hofmann, Andrea; Jirovec, Daniel; Borovkov, Maxim arXiv https://doi.org/10.48550/arxiv.1910.05841	preprint	January 2019
Integrated silicon qubit platform with single-spin addressability, exchange control and single-shot singlet-triplet readout Fogarty, M. A.; Chan, K. W.; Hensen, B. Nature Communications, Vol. 9, Issue 1 https://doi.org/10.1038/s41467-018-06039-x	journal	October 2018
Enhancing the dipolar coupling of a S-T0 qubit with a transverse sweet spot Abadillo-Uriel, J. C.; Eriksson, M. A.; Coppersmith, S. N. Nature Communications, Vol. 10, Issue 1 https://doi.org/10.1038/s41467-019-13548-w	journal	December 2019
Spin–orbit coupling in silicon for electrons bound to donors Weber, Bent; Hsueh, Yu-Ling; Watson, Thomas F. npj Quantum Information, Vol. 4, Issue 1 https://doi.org/10.1038/s41534-018-0111-1	journal	November 2018
Adiabatic two-qubit gates in capacitively coupled quantum dot hybrid qubits Frees, Adam; Mehl, Sebastian; Gamble, John King npj Quantum Information, Vol. 5, Issue 1 https://doi.org/10.1038/s41534-019-0190-7	journal	September 2019
Two-axis quantum control of a fast valley qubit in silicon Penthorn, Nicholas E.; Schoenfield, Joshua S.; Rooney, John D. npj Quantum Information, Vol. 5, Issue 1 https://doi.org/10.1038/s41534-019-0212-5	journal	November 2019
Single-Shot Readout Performance of Two Heterojunction-Bipolar-Transistor Amplification Circuits at Millikelvin Temperatures Curry, M. J.; Rudolph, M.; England, T. D. Scientific Reports, Vol. 9, Issue 1 https://doi.org/10.1038/s41598-019-52868-1	journal	November 2019
Observation of spin–orbit coupling induced Weyl points in a two-electron double quantum dot Scherübl, Zoltán; Pályi, András; Frank, György Communications Physics, Vol. 2, Issue 1 https://doi.org/10.1038/s42005-019-0200-2	journal	September 2019
Effect of device design on charge offset drift in Si/SiO ₂ single electron devices Hu, Binhui; Ochoa, Erick D.; Sanchez, Daniel Journal of Applied Physics, Vol. 124, Issue 14 https://doi.org/10.1063/1.5048013	journal	October 2018
Quantum dots with split enhancement gate tunnel barrier control Rochette, S.; Rudolph, M.; Roy, A. -M. Applied Physics Letters, Vol. 114, Issue 8 https://doi.org/10.1063/1.5091111	journal	February 2019
Quantum computing with semiconductor spins Vandersypen, Lieven M. K.; Eriksson, Mark A. Physics Today, Vol. 72, Issue 8 https://doi.org/10.1063/pt.3.4270	journal	August 2019
Reduction of charge impurities in a silicon metal-oxide-semiconductor quantum dot qubit device patterned with nano-imprint lithography Penthorn, Nicholas E.; Schoenfield, Joshua S.; Rooney, John D. Nanotechnology, Vol. 30, Issue 46 https://doi.org/10.1088/1361-6528/ab3cb9	journal	September 2019
Network architecture for a topological quantum computer in silicon Buonacorsi, Brandon; Cai, Zhenyu; Ramirez, Eduardo B. Quantum Science and Technology, Vol. 4, Issue 2 https://doi.org/10.1088/2058-9565/aaf3c4	journal	January 2019
Semiconductor quantum computation Zhang, Xin; Li, Hai-Ou; Cao, Gang National Science Review, Vol. 6, Issue 1 https://doi.org/10.1093/nsr/nwy153	journal	December 2018
Hyperfine-assisted decoherence of a phosphorus nuclear-spin qubit in silicon Hetényi, Bence; Boross, Péter; Pályi, András Physical Review B, Vol. 100, Issue 11 https://doi.org/10.1103/physrevb.100.115435	journal	September 2019
Electric-field control and noise protection of the flopping-mode spin qubit Benito, M.; Croot, X.; Adelsberger, C. Physical Review B, Vol. 100, Issue 12 https://doi.org/10.1103/physrevb.100.125430	journal	September 2019
Interface-induced spin-orbit interaction in silicon quantum dots and prospects for scalability Ferdous, Rifat; Chan, Kok W.; Veldhorst, Menno Physical Review B, Vol. 97, Issue 24 https://doi.org/10.1103/physrevb.97.241401	journal	June 2018
Pulse sequence designed for robust C -phase gates in SiMOS and Si/SiGe double quantum dots Güngördü, Utkan; Kestner, J. P. Physical Review B, Vol. 98, Issue 16 https://doi.org/10.1103/physrevb.98.165301	journal	October 2018
Leakage and dephasing in Si 28 -based exchange-only spin qubits Sala, Arnau; Danon, Jeroen Physical Review B, Vol. 98, Issue 24 https://doi.org/10.1103/physrevb.98.245409	journal	December 2018
Electron g -factor of valley states in realistic silicon quantum dots Ruskov, Rusko; Veldhorst, Menno; Dzurak, Andrew S. Physical Review B, Vol. 98, Issue 24 https://doi.org/10.1103/physrevb.98.245424	journal	December 2018
Spin-orbit Interactions for Singlet-Triplet Qubits in Silicon Harvey-Collard, Patrick; Jacobson, N. Tobias; Bureau-Oxton, Chloé Physical Review Letters, Vol. 122, Issue 21 https://doi.org/10.1103/physrevlett.122.217702	journal	May 2019
Controlling Spin-Orbit Interactions in Silicon Quantum Dots Using Magnetic Field Direction Tanttu, Tuomo; Hensen, Bas; Chan, Kok Wai Physical Review X, Vol. 9, Issue 2 https://doi.org/10.1103/physrevx.9.021028	journal	May 2019
A Silicon Surface Code Architecture Resilient Against Leakage Errors Cai, Zhenyu; Fogarty, Michael A.; Schaal, Simon Quantum, Vol. 3 https://doi.org/10.22331/q-2019-12-09-212	journal	December 2019
Pulse sequence designed for robust C-phase gates in SiMOS and Si/SiGe double quantum dots Güngördü, Utkan; Kestner, J. P. arXiv https://doi.org/10.48550/arxiv.1806.01262	text	January 2018
Effect of device design on charge offset drift in Si/SiO$_2$ single electron devices Hu, Binhui; Ochoa, Erick D.; Sanchez, Daniel arXiv https://doi.org/10.48550/arxiv.1807.04342	text	January 2018
Spin-orbit Interactions for Singlet-Triplet Qubits in Silicon Harvey-Collard, Patrick; Jacobson, N. Tobias; Bureau-Oxton, Chloé arXiv https://doi.org/10.48550/arxiv.1808.07378	text	January 2018
A Silicon Surface Code Architecture Resilient Against Leakage Errors Cai, Zhenyu; Fogarty, Michael A.; Schaal, Simon arXiv https://doi.org/10.48550/arxiv.1904.10378	text	January 2019

Similar Records

Probing low noise at the MOS interface with a spin-orbit qubit.

Program Document · Sat Jul 01 00:00:00 EDT 2017 · OSTI ID:1429803

Qubit control noise spectroscopy with optimal suppression of dephasing

Journal Article · Tue Aug 23 00:00:00 EDT 2022 · Physical Review A · OSTI ID:1979626

Related Subjects

36 MATERIALS SCIENCE

A silicon metal-oxide-semiconductor electron spin-orbit qubit

Citation Formats

References (79)

Cited By (31)

Similar Records

Related Subjects