A silicon metal-oxide-semiconductor electron spin-orbit qubit

Jock, Ryan Michael; Jacobson, Noah Tobias; Harvey-Collard, Patrick; Mounce, Andrew M.; Srinivasa, Vanita; Ward, Daniel Robert; Anderson, John; Manginell, Ron; Wendt, Joel R.; Rudolph, Martin; Pluym, Tammy; Gamble, John King; Baczewski, Andrew David; Witzel, Wayne M.; Carroll, Malcolm S.

doi:10.1038/s41467-018-04200-0

Title: A silicon metal-oxide-semiconductor electron spin-orbit qubit

Journal Article · Wed May 02 00:00:00 EDT 2018 · Nature Communications

DOI:https://doi.org/10.1038/s41467-018-04200-0· OSTI ID:1452895

^[1]; Jacobson, Noah Tobias ^[1]; Harvey-Collard, Patrick ^[2]; Mounce, Andrew M. ^[1]; Srinivasa, Vanita ^[1]; Ward, Daniel Robert ^[1]; Anderson, John ^[1]; Manginell, Ron ^[1]; Wendt, Joel R. ^[1]; Rudolph, Martin ^[1]; Pluym, Tammy ^[1]; Gamble, John King ^[1]; Baczewski, Andrew David ^[1]; Witzel, Wayne M. ^[1]; Carroll, Malcolm S. ^[1]

Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Univ. de Sherbrooke, Sherbrooke, QC (Canada)

Here, the silicon metal-oxide-semiconductor (MOS) material system is a technologically important implementation of spin-based quantum information processing. However, the MOS interface is imperfect leading to concerns about 1/f trap noise and variability in the electron g-factor due to spin–orbit (SO) effects. Here we advantageously use interface–SO coupling for a critical control axis in a double-quantum-dot singlet–triplet qubit. The magnetic field-orientation dependence of the g-factors is consistent with Rashba and Dresselhaus interface–SO contributions. The resulting all-electrical, two-axis control is also used to probe the MOS interface noise. The measured inhomogeneous dephasing time, T*_2m, of 1.6 μs is consistent with 99.95% 28Si enrichment. Furthermore, when tuned to be sensitive to exchange fluctuations, a quasi–static charge noise detuning variance of 2 μeV is observed, competitive with low-noise reports in other semiconductor qubits. This work, therefore, demonstrates that the MOS interface inherently provides properties for two-axis qubit control, while not increasing noise relative to other material choices.

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Research Organization:: Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

Sponsoring Organization:: Work for Others (WFO); USDOE

Grant/Contract Number:: AC04-94AL85000

OSTI ID:: 1452895

Alternate ID(s):: OSTI ID: 1457181

Report Number(s):: SAND-2018-2432J; SAND-2018-0080J; 661217

Journal Information:: Nature Communications, Vol. 9, Issue 1; ISSN 2041-1723

Publisher:: Nature Publishing GroupCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 74 works

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